{ "id": "power-semiconductor-supply", "title": "Power Semiconductor Supply & Capacity Tracker", "asOf": "2026-06-07", "description": "A living tracker of major power-semiconductor makers' SiC wafer migration (6→8 inch), recent capacity/impairment moves, key supply agreements, and EV exposure — organized by primary source. A supply-risk index is planned.", "columns": { "waferTransition": "SiC wafer migration (6→8 inch)", "evExposure": "EV exposure", "latestMove": "Recent moves (capacity / impairment / product)", "supplyAgreements": "Key supply agreements / partnerships" }, "companies": [ { "id": "infineon", "name": "Infineon", "hqRegion": "Europe", "waferTransition": "Scaling 200mm SiC production (Villach/Kulim)", "evExposure": "Medium (spread across auto, industrial, power)", "latestMove": "Expanding CoolSiC; strengthening GaN/SiC for AI datacenter power", "supplyAgreements": "Long-term SiC wafer supply with SK Siltron and others", "sourceUrl": "https://www.infineon.com/cms/en/about-infineon/press/", "relatedArticles": [ "infineon-coolsic-product-update", "infineon-sk-siltron-sic-wafer-supply", "infineon-technologies-fy2026-q2-ai-gan-sic" ] }, { "id": "stmicroelectronics", "name": "STMicroelectronics", "hqRegion": "Europe", "waferTransition": "Building an integrated 200mm SiC site in Catania, Italy", "evExposure": "High (high share of automotive SiC)", "latestMove": "Expanding integrated SiC production; cost adjustments amid soft demand", "supplyAgreements": "SiC JV with China's Sanan (Chongqing)", "sourceUrl": "https://newsroom.st.com/", "relatedArticles": [ "stmicro-sic-fab-production", "st-ampere-sic-power-module-2026", "european-oem-sic-procurement-strategy" ] }, { "id": "onsemi", "name": "onsemi", "hqRegion": "United States", "waferTransition": "In-house 200mm SiC substrate ramp", "evExposure": "High (EV SiC at the core)", "latestMove": "Shipment adjustments amid EV slowdown; focus on AI datacenter recovery", "supplyAgreements": "Vertical integration (substrate to module)", "sourceUrl": "https://www.onsemi.com/company/news-media", "relatedArticles": [ "onsemi-sic-business-outlook", "onsemi-infineon-ai-datacenter-recovery-q1-q2-2026" ] }, { "id": "wolfspeed", "name": "Wolfspeed", "hqRegion": "United States", "waferTransition": "200mm SiC pure-play; Mohawk Valley online; vertically integrated", "evExposure": "Very high (dependent on EV long-term contracts)", "latestMove": "Filed Chapter 11 in Jun 2025, emerged Sep 29 cutting ~$4.6B (~70%) debt; EV slowdown, Chinese competition, NY fab ramp delays cited", "supplyAgreements": "10-year SiC wafer supply with Renesas and others", "sourceUrl": "https://www.wolfspeed.com/company/news-events/", "relatedArticles": [ "wolfspeed-risk-procurement-strategy", "renesas-wolfspeed-10-year-sic-wafer-supply", "sic-supplier-comparison-wolfspeed-alternatives" ] }, { "id": "rohm", "name": "ROHM", "hqRegion": "Japan", "waferTransition": "Preparing 200mm SiC mass production; Gen5 SiC MOSFET", "evExposure": "Medium (long-term auto/industrial base)", "latestMove": "SiC impairment in FY2025; continued capacity expansion", "supplyAgreements": "SiC collaboration with Toshiba; automotive BBU products", "sourceUrl": "https://www.rohm.com/news", "relatedArticles": [ "rohm-gen5-sic-mosfet-evaluation", "rohm-fy2025-sic-impairment-loss", "rohm-sct4013dll-750v-sic-bbu-2026" ] }, { "id": "mitsubishi-electric", "name": "Mitsubishi Electric", "hqRegion": "Japan", "waferTransition": "SiC capacity investment; 200mm substrate work with Coherent", "evExposure": "Medium (spread across industrial, rail, auto)", "latestMove": "Next-gen IGBT/SiC modules; 1200V samples", "supplyAgreements": "200mm SiC substrate collaboration with Coherent", "sourceUrl": "https://www.mitsubishielectric.com/news/", "relatedArticles": [ "mitsubishi-coherent-8inch-sic-substrate", "mitsubishi-nx-igbt-1200v-sample-2026" ] }, { "id": "fuji-electric", "name": "Fuji Electric", "hqRegion": "Japan", "waferTransition": "Expanding SiC capacity (Aomori, etc.)", "evExposure": "Low-Medium (industrial/power centric)", "latestMove": "Next-gen IGBT; expanding SiC for industrial/auto", "supplyAgreements": "Primarily domestic supply", "sourceUrl": "https://www.fujielectric.com/company/news/", "relatedArticles": [ "fuji-electric-next-gen-igbt" ] }, { "id": "toshiba", "name": "Toshiba Device & Storage", "hqRegion": "Japan", "waferTransition": "Expanding SiC capacity at Kaga Toshiba (Ishikawa)", "evExposure": "Medium (auto/industrial)", "latestMove": "Loss reduction with triple-gate IGBT; SiC MOSFET (QDPAK)", "supplyAgreements": "SiC collaboration with ROHM", "sourceUrl": "https://toshiba.semicon-storage.com/jp/company/news.html", "relatedArticles": [ "toshiba-triple-gate-igbt-loss-reduction", "toshiba-tw007d120e-sic-mosfet-qdpak-2026" ] }, { "id": "renesas", "name": "Renesas Electronics", "hqRegion": "Japan", "waferTransition": "SiC mass-production plan at Takasaki; GaN via Transphorm", "evExposure": "Medium (auto-centric; SiC new entrant)", "latestMove": "Acquired Transphorm for GaN; in-housing SiC", "supplyAgreements": "10-year SiC wafer supply with Wolfspeed", "sourceUrl": "https://www.renesas.com/en/about/newsroom", "relatedArticles": [ "renesas-transphorm-gan-acquisition", "renesas-wolfspeed-10-year-sic-wafer-supply" ] }, { "id": "navitas", "name": "Navitas Semiconductor", "hqRegion": "United States", "waferTransition": "GaN-centric (GaNFast) plus SiC", "evExposure": "Low (mobile/datacenter power centric)", "latestMove": "Growth in GaN/SiC for AI datacenter power", "supplyAgreements": "Fab-lite (foundry-based)", "sourceUrl": "https://navitassemi.com/news/", "relatedArticles": [ "gan-market-navitas-q1-2026" ] }, { "id": "byd-semiconductor", "name": "BYD Semiconductor", "hqRegion": "China", "waferTransition": "Expanding in-house SiC production; vertically integrated", "evExposure": "High (in-house EVs at the core)", "latestMove": "Expanding SiC production on China's EV demand", "supplyAgreements": "In-house supply for BYD vehicles", "sourceUrl": "https://www.byd.com/", "relatedArticles": [ "byd-semi-sic-production-expansion", "china-sic-supplier-adoption-criteria" ] }, { "id": "crrc-times", "name": "CRRC Times Electric", "hqRegion": "China", "waferTransition": "Localizing SiC/IGBT for rail and industrial", "evExposure": "Medium (rail/industrial/auto)", "latestMove": "Capacity expansion on localization policy", "supplyAgreements": "Domestic supply chain centric", "sourceUrl": "https://www.teco-hk.com/", "relatedArticles": [ "igbt-china-manufacturers-rise", "china-igbt-tco-procurement-guide" ] }, { "id": "silan", "name": "Silan Microelectronics", "hqRegion": "China", "waferTransition": "Expanding domestic IGBT/SiC capacity", "evExposure": "Medium (auto/industrial/consumer)", "latestMove": "Gaining share via Chinese price competitiveness", "supplyAgreements": "Primarily domestic", "sourceUrl": "https://www.silan.com.cn/", "relatedArticles": [ "igbt-china-manufacturers-rise", "power-semi-market-restructuring-map" ] }, { "id": "semikron-danfoss", "name": "Semikron Danfoss", "hqRegion": "Europe", "waferTransition": "Module specialist (chips mostly sourced externally)", "evExposure": "Medium (automotive/industrial modules)", "latestMove": "Expanding automotive SiC power modules", "supplyAgreements": "Sources chips from various makers to build modules", "sourceUrl": "https://www.semikron-danfoss.com/about/news.html", "relatedArticles": [ "power-module-tier1-supplier-comparison", "sic-module-vs-discrete" ] } ] }