{
  "id": "power-semiconductor-supply",
  "title": "パワー半導体 供給・能力トラッカー",
  "asOf": "2026-06-07",
  "description": "主要パワー半導体メーカーの SiC ウェハ移行（6→8インチ）状況、直近の増設・減損、主要供給契約、EV依存度を一次ソースで横断整理する定点トラッカー。供給リスク指数は今後追加予定。",
  "columns": {
    "waferTransition": "SiCウェハ移行（6→8インチ）",
    "evExposure": "EV依存度",
    "latestMove": "直近の動き（増設・減損・製品）",
    "supplyAgreements": "主要供給契約・提携"
  },
  "companies": [
    {
      "id": "infineon",
      "name": "Infineon",
      "hqRegion": "欧州",
      "waferTransition": "200mm SiC量産移行を推進（Villach/Kulim）",
      "evExposure": "中（車載・産業・電源に分散）",
      "latestMove": "CoolSiC拡充、AIデータセンター電源向けGaN/SiC強化",
      "supplyAgreements": "SK Siltron等とSiCウェハ長期供給",
      "sourceUrl": "https://www.infineon.com/cms/en/about-infineon/press/",
      "relatedArticles": [
        "infineon-coolsic-product-update",
        "infineon-sk-siltron-sic-wafer-supply",
        "infineon-technologies-fy2026-q2-ai-gan-sic"
      ]
    },
    {
      "id": "stmicroelectronics",
      "name": "STMicroelectronics",
      "hqRegion": "欧州",
      "waferTransition": "イタリア・カターニアで200mm SiC統合拠点を整備",
      "evExposure": "高（車載SiCの比率が高い）",
      "latestMove": "SiC一貫生産の拡張、需要鈍化局面でコスト調整",
      "supplyAgreements": "中国・三安光電とSiC合弁（重慶）",
      "sourceUrl": "https://newsroom.st.com/",
      "relatedArticles": [
        "stmicro-sic-fab-production",
        "st-ampere-sic-power-module-2026",
        "european-oem-sic-procurement-strategy"
      ]
    },
    {
      "id": "onsemi",
      "name": "onsemi",
      "hqRegion": "米国",
      "waferTransition": "自社200mm SiC基板内製を推進",
      "evExposure": "高（EV向けSiCが中核）",
      "latestMove": "EV鈍化で出荷調整、AIデータセンター回復に注力",
      "supplyAgreements": "垂直統合（基板〜モジュール）志向",
      "sourceUrl": "https://www.onsemi.com/company/news-media",
      "relatedArticles": [
        "onsemi-sic-business-outlook",
        "onsemi-infineon-ai-datacenter-recovery-q1-q2-2026"
      ]
    },
    {
      "id": "wolfspeed",
      "name": "Wolfspeed",
      "hqRegion": "米国",
      "waferTransition": "200mm SiC専業、Mohawk Valley稼働。垂直統合体制を維持",
      "evExposure": "非常に高い（EV長期契約に依存）",
      "latestMove": "2025年6月Chapter 11申請→9/29再建完了。約46億ドル(約70%)の債務を圧縮し継続供給。EV鈍化・中国勢競合・NY工場立上げ遅延が背景",
      "supplyAgreements": "Renesas等と10年SiCウェハ供給契約",
      "sourceUrl": "https://www.wolfspeed.com/company/news-events/",
      "relatedArticles": [
        "wolfspeed-risk-procurement-strategy",
        "renesas-wolfspeed-10-year-sic-wafer-supply",
        "sic-supplier-comparison-wolfspeed-alternatives"
      ]
    },
    {
      "id": "rohm",
      "name": "ROHM",
      "hqRegion": "日本",
      "waferTransition": "8インチSiC量産を準備、Gen5 SiC MOSFET展開",
      "evExposure": "中（車載・産業の長期顧客基盤）",
      "latestMove": "FY2025にSiC減損、量産能力増強は継続",
      "supplyAgreements": "東芝とSiCで協業、車載BBU向け製品",
      "sourceUrl": "https://www.rohm.com/news",
      "relatedArticles": [
        "rohm-gen5-sic-mosfet-evaluation",
        "rohm-fy2025-sic-impairment-loss",
        "rohm-sct4013dll-750v-sic-bbu-2026"
      ]
    },
    {
      "id": "mitsubishi-electric",
      "name": "三菱電機",
      "hqRegion": "日本",
      "waferTransition": "SiC増産投資、8インチ基板に向けCoherentと協業",
      "evExposure": "中（産業・鉄道・車載に分散）",
      "latestMove": "次世代IGBT/SiCモジュール、1200V級サンプル",
      "supplyAgreements": "Coherentと8インチSiC基板で協業",
      "sourceUrl": "https://www.mitsubishielectric.com/news/",
      "relatedArticles": [
        "mitsubishi-coherent-8inch-sic-substrate",
        "mitsubishi-nx-igbt-1200v-sample-2026"
      ]
    },
    {
      "id": "fuji-electric",
      "name": "富士電機",
      "hqRegion": "日本",
      "waferTransition": "SiC量産能力を増強（青森等）",
      "evExposure": "低〜中（産業・電源が中心）",
      "latestMove": "次世代IGBT、産業・車載向けSiC拡大",
      "supplyAgreements": "国内中心の供給体制",
      "sourceUrl": "https://www.fujielectric.com/company/news/",
      "relatedArticles": [
        "fuji-electric-next-gen-igbt"
      ]
    },
    {
      "id": "toshiba",
      "name": "東芝デバイス&ストレージ",
      "hqRegion": "日本",
      "waferTransition": "石川・加賀東芝でSiC能力増強",
      "evExposure": "中（車載・産業）",
      "latestMove": "三重ゲートIGBTで損失低減、SiC MOSFET（QDPAK）展開",
      "supplyAgreements": "ROHMとSiCで協業",
      "sourceUrl": "https://toshiba.semicon-storage.com/jp/company/news.html",
      "relatedArticles": [
        "toshiba-triple-gate-igbt-loss-reduction",
        "toshiba-tw007d120e-sic-mosfet-qdpak-2026"
      ]
    },
    {
      "id": "renesas",
      "name": "ルネサスエレクトロニクス",
      "hqRegion": "日本",
      "waferTransition": "高崎でSiC量産計画（GaNはTransphorm買収）",
      "evExposure": "中（車載中心、SiCは新規参入）",
      "latestMove": "Transphorm買収でGaN取り込み、SiC内製化",
      "supplyAgreements": "Wolfspeedと10年SiCウェハ供給契約",
      "sourceUrl": "https://www.renesas.com/en/about/newsroom",
      "relatedArticles": [
        "renesas-transphorm-gan-acquisition",
        "renesas-wolfspeed-10-year-sic-wafer-supply"
      ]
    },
    {
      "id": "navitas",
      "name": "Navitas Semiconductor",
      "hqRegion": "米国",
      "waferTransition": "GaN中心（GaNファスト）＋SiC",
      "evExposure": "低（モバイル・データセンター電源が中心）",
      "latestMove": "AIデータセンター電源向けGaN/SiCで成長",
      "supplyAgreements": "ファウンドリ活用（ファブライト）",
      "sourceUrl": "https://navitassemi.com/news/",
      "relatedArticles": [
        "gan-market-navitas-q1-2026"
      ]
    },
    {
      "id": "byd-semiconductor",
      "name": "BYD半導体",
      "hqRegion": "中国",
      "waferTransition": "自社SiC量産を拡張、垂直統合",
      "evExposure": "高（自社EV向けが中核）",
      "latestMove": "中国EV需要を背景にSiC生産拡張",
      "supplyAgreements": "BYD車載向けの内製供給",
      "sourceUrl": "https://www.byd.com/",
      "relatedArticles": [
        "byd-semi-sic-production-expansion",
        "china-sic-supplier-adoption-criteria"
      ]
    },
    {
      "id": "crrc-times",
      "name": "CRRC時代電気",
      "hqRegion": "中国",
      "waferTransition": "鉄道・産業向けSiC/IGBTを国産化",
      "evExposure": "中（鉄道・産業・車載）",
      "latestMove": "国産化政策を背景に能力拡張",
      "supplyAgreements": "国内サプライチェーン中心",
      "sourceUrl": "https://www.teco-hk.com/",
      "relatedArticles": [
        "igbt-china-manufacturers-rise",
        "china-igbt-tco-procurement-guide"
      ]
    },
    {
      "id": "silan",
      "name": "Silan Microelectronics",
      "hqRegion": "中国",
      "waferTransition": "IGBT/SiCの国産能力を拡張",
      "evExposure": "中（車載・産業・民生）",
      "latestMove": "中国勢の価格競争力で市場シェア拡大",
      "supplyAgreements": "国内中心",
      "sourceUrl": "https://www.silan.com.cn/",
      "relatedArticles": [
        "igbt-china-manufacturers-rise",
        "power-semi-market-restructuring-map"
      ]
    },
    {
      "id": "semikron-danfoss",
      "name": "Semikron Danfoss",
      "hqRegion": "欧州",
      "waferTransition": "モジュール専業（チップは外部調達中心）",
      "evExposure": "中（車載・産業モジュール）",
      "latestMove": "車載SiCパワーモジュールを拡大",
      "supplyAgreements": "各チップメーカーから調達しモジュール化",
      "sourceUrl": "https://www.semikron-danfoss.com/about/news.html",
      "relatedArticles": [
        "power-module-tier1-supplier-comparison",
        "sic-module-vs-discrete"
      ]
    }
  ]
}