{
  "id": "power-semiconductor-supply",
  "title": "功率半导体 供应·产能追踪器",
  "asOf": "2026-06-07",
  "description": "横向梳理主要功率半导体厂商SiC晶圆迁移（6→8英寸）状况、近期扩产·减值、主要供应合同与EV依赖度的定点追踪器，按一手来源整理。供应风险指数计划后续追加。",
  "columns": {
    "waferTransition": "SiC晶圆迁移（6→8英寸）",
    "evExposure": "EV依赖度",
    "latestMove": "近期动向（扩产·减值·产品）",
    "supplyAgreements": "主要供应合同·合作"
  },
  "companies": [
    {
      "id": "infineon",
      "name": "Infineon",
      "hqRegion": "欧洲",
      "waferTransition": "推进200mm SiC量产（Villach/Kulim）",
      "evExposure": "中（车载·工业·电源分散）",
      "latestMove": "扩充CoolSiC；强化面向AI数据中心电源的GaN/SiC",
      "supplyAgreements": "与SK Siltron等签订SiC晶圆长期供应",
      "sourceUrl": "https://www.infineon.com/cms/en/about-infineon/press/",
      "relatedArticles": [
        "infineon-coolsic-product-update",
        "infineon-sk-siltron-sic-wafer-supply",
        "infineon-technologies-fy2026-q2-ai-gan-sic"
      ]
    },
    {
      "id": "stmicroelectronics",
      "name": "STMicroelectronics",
      "hqRegion": "欧洲",
      "waferTransition": "在意大利卡塔尼亚建设200mm SiC一体化基地",
      "evExposure": "高（车载SiC占比高）",
      "latestMove": "扩张SiC一体化生产；需求疲软下进行成本调整",
      "supplyAgreements": "与中国三安在重庆设立SiC合资",
      "sourceUrl": "https://newsroom.st.com/",
      "relatedArticles": [
        "stmicro-sic-fab-production",
        "st-ampere-sic-power-module-2026",
        "european-oem-sic-procurement-strategy"
      ]
    },
    {
      "id": "onsemi",
      "name": "onsemi",
      "hqRegion": "美国",
      "waferTransition": "自有200mm SiC衬底量产推进",
      "evExposure": "高（EV用SiC为核心）",
      "latestMove": "EV放缓下调整出货；聚焦AI数据中心复苏",
      "supplyAgreements": "垂直整合（衬底至模块）",
      "sourceUrl": "https://www.onsemi.com/company/news-media",
      "relatedArticles": [
        "onsemi-sic-business-outlook",
        "onsemi-infineon-ai-datacenter-recovery-q1-q2-2026"
      ]
    },
    {
      "id": "wolfspeed",
      "name": "Wolfspeed",
      "hqRegion": "美国",
      "waferTransition": "200mm SiC专业厂；Mohawk Valley投产；垂直整合",
      "evExposure": "极高（依赖EV长期合同）",
      "latestMove": "2025年6月申请Chapter 11，9/29完成重组，削减约46亿美元(约70%)债务并持续供货；背景为EV放缓·中国竞争·纽约工厂爬坡延迟",
      "supplyAgreements": "与瑞萨等签订10年SiC晶圆供应",
      "sourceUrl": "https://www.wolfspeed.com/company/news-events/",
      "relatedArticles": [
        "wolfspeed-risk-procurement-strategy",
        "renesas-wolfspeed-10-year-sic-wafer-supply",
        "sic-supplier-comparison-wolfspeed-alternatives"
      ]
    },
    {
      "id": "rohm",
      "name": "ROHM",
      "hqRegion": "日本",
      "waferTransition": "筹备200mm SiC量产；第5代SiC MOSFET",
      "evExposure": "中（车载·工业长期客户基础）",
      "latestMove": "FY2025计提SiC减值；持续增强产能",
      "supplyAgreements": "与东芝在SiC合作；车载BBU产品",
      "sourceUrl": "https://www.rohm.com/news",
      "relatedArticles": [
        "rohm-gen5-sic-mosfet-evaluation",
        "rohm-fy2025-sic-impairment-loss",
        "rohm-sct4013dll-750v-sic-bbu-2026"
      ]
    },
    {
      "id": "mitsubishi-electric",
      "name": "三菱电机",
      "hqRegion": "日本",
      "waferTransition": "SiC增产投资；与Coherent合作200mm衬底",
      "evExposure": "中（工业·铁路·车载分散）",
      "latestMove": "下一代IGBT/SiC模块；1200V样品",
      "supplyAgreements": "与Coherent在200mm SiC衬底合作",
      "sourceUrl": "https://www.mitsubishielectric.com/news/",
      "relatedArticles": [
        "mitsubishi-coherent-8inch-sic-substrate",
        "mitsubishi-nx-igbt-1200v-sample-2026"
      ]
    },
    {
      "id": "fuji-electric",
      "name": "富士电机",
      "hqRegion": "日本",
      "waferTransition": "扩增SiC产能（青森等）",
      "evExposure": "低-中（以工业·电源为主）",
      "latestMove": "下一代IGBT；扩大面向工业·车载的SiC",
      "supplyAgreements": "以国内供应为主",
      "sourceUrl": "https://www.fujielectric.com/company/news/",
      "relatedArticles": [
        "fuji-electric-next-gen-igbt"
      ]
    },
    {
      "id": "toshiba",
      "name": "东芝器件与存储",
      "hqRegion": "日本",
      "waferTransition": "在加贺东芝（石川）扩增SiC产能",
      "evExposure": "中（车载·工业）",
      "latestMove": "以三重栅IGBT降损；SiC MOSFET（QDPAK）",
      "supplyAgreements": "与ROHM在SiC合作",
      "sourceUrl": "https://toshiba.semicon-storage.com/jp/company/news.html",
      "relatedArticles": [
        "toshiba-triple-gate-igbt-loss-reduction",
        "toshiba-tw007d120e-sic-mosfet-qdpak-2026"
      ]
    },
    {
      "id": "renesas",
      "name": "瑞萨电子",
      "hqRegion": "日本",
      "waferTransition": "高崎SiC量产计划；经收购Transphorm获得GaN",
      "evExposure": "中（以车载为主；SiC为新进入）",
      "latestMove": "收购Transphorm纳入GaN；推进SiC自产",
      "supplyAgreements": "与Wolfspeed签订10年SiC晶圆供应",
      "sourceUrl": "https://www.renesas.com/en/about/newsroom",
      "relatedArticles": [
        "renesas-transphorm-gan-acquisition",
        "renesas-wolfspeed-10-year-sic-wafer-supply"
      ]
    },
    {
      "id": "navitas",
      "name": "Navitas Semiconductor",
      "hqRegion": "美国",
      "waferTransition": "以GaN为主（GaNFast）兼SiC",
      "evExposure": "低（以移动·数据中心电源为主）",
      "latestMove": "面向AI数据中心电源的GaN/SiC增长",
      "supplyAgreements": "采用代工（fab-lite）",
      "sourceUrl": "https://navitassemi.com/news/",
      "relatedArticles": [
        "gan-market-navitas-q1-2026"
      ]
    },
    {
      "id": "byd-semiconductor",
      "name": "比亚迪半导体",
      "hqRegion": "中国",
      "waferTransition": "扩张自有SiC量产；垂直整合",
      "evExposure": "高（以自有EV为核心）",
      "latestMove": "在中国EV需求支撑下扩张SiC生产",
      "supplyAgreements": "面向比亚迪车辆的自供",
      "sourceUrl": "https://www.byd.com/",
      "relatedArticles": [
        "byd-semi-sic-production-expansion",
        "china-sic-supplier-adoption-criteria"
      ]
    },
    {
      "id": "crrc-times",
      "name": "中车时代电气",
      "hqRegion": "中国",
      "waferTransition": "面向铁路·工业的SiC/IGBT国产化",
      "evExposure": "中（铁路·工业·车载）",
      "latestMove": "在国产化政策下扩增产能",
      "supplyAgreements": "以国内供应链为主",
      "sourceUrl": "https://www.teco-hk.com/",
      "relatedArticles": [
        "igbt-china-manufacturers-rise",
        "china-igbt-tco-procurement-guide"
      ]
    },
    {
      "id": "silan",
      "name": "士兰微",
      "hqRegion": "中国",
      "waferTransition": "扩增国产IGBT/SiC产能",
      "evExposure": "中（车载·工业·消费）",
      "latestMove": "凭借中国价格竞争力扩大份额",
      "supplyAgreements": "以国内为主",
      "sourceUrl": "https://www.silan.com.cn/",
      "relatedArticles": [
        "igbt-china-manufacturers-rise",
        "power-semi-market-restructuring-map"
      ]
    },
    {
      "id": "semikron-danfoss",
      "name": "Semikron Danfoss",
      "hqRegion": "欧洲",
      "waferTransition": "模块专业厂（芯片以外购为主）",
      "evExposure": "中（车载·工业模块）",
      "latestMove": "扩大车载SiC功率模块",
      "supplyAgreements": "从各芯片厂采购并制成模块",
      "sourceUrl": "https://www.semikron-danfoss.com/about/news.html",
      "relatedArticles": [
        "power-module-tier1-supplier-comparison",
        "sic-module-vs-discrete"
      ]
    }
  ]
}