Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
Practical Guide to Power Semiconductors for Grid Stabilization: STATCOM, HVDC, FACTS
A comprehensive overview of power semiconductors for STATCOM and HVDC systems, which are seeing increased demand due to renewable energy integration. Covers Mitsubishi Electric's ±450MVAr track record, Infineon's 4500V IGBT modules, LCC vs. VSC technology selection, and procurement insights.
Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT
An overview of power electronics for water electrolysis systems in green hydrogen production. Explains the adoption of MW-class SiC, grid code compliance, onsemi/Infineon PFC/DC-DC solutions, and insights on CAPEX/OPEX.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.
Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%
Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.
China IGBT Market: Is 30% Cheaper Worth It on TCO?
Is Chinese IGBT's 30%-lower price real competitiveness or a temporary offensive? We weigh the full TCO — AEC-Q101 cost, redesign hours, and supply risk.
Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs
ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.
IGBT to SiC MOSFET: Evaluating TCO and Miniaturization
The key criterion for deciding to switch from IGBT to SiC is not a device-level cost comparison, but rather how SiC-enabled downsizing of cooling systems and passive components changes the overall system BOM cost and product specifications. This article organizes application-specific decision frameworks and hybrid SiC as an intermediate solution.
China IGBT Market: Self-Sufficiency Reshapes Supply
Chinese IGBT makers — BYD, Starpower, CRRC Times — are raising self-sufficiency and going global, reshaping competition with EU and Japanese suppliers.
Solar Inverter Power Devices: Si IGBT vs SiC vs GaN
How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.
Fuji Electric Unveils Next-Generation IGBT
As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Power Semi Majors: Investment Strategies for SiC, GaN, IGBT
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.
Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%
Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.