Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
The IGBT Market Shifts — How Chinese Manufacturers Are Changing the Procurement Landscape
Chinese IGBT manufacturers such as BYD Semiconductor, Starpower Semiconductor, and CRRC Times are rapidly increasing domestic self-sufficiency and accelerating their entry into global markets. Intensifying price competition and concerns about oversupply are reshaping the competitive landscape against European and Japanese suppliers. This article examines the procurement implications.
Power Device Selection Logic for Solar Inverters
Solar power conditioning systems (PCS) use Si IGBT, SiC MOSFET, and GaN-on-Si selectively depending on application type and output scale. We examine the decision criteria for device selection, the positioning of major suppliers, and key procurement considerations.
Fuji Electric Unveils Next-Generation IGBT
As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Comparing Investment Strategies for SiC, GaN, and IGBT by Major Semiconductor Manufacturers
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.
Toshiba Triple-Gate IGBT Achieves 40% Reduction in Power Loss
Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.