Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
DG Matrix Doubles SST Output to 400 kW
On September 24, 2026, DG Matrix said ST SiC devices doubled its Interport multi-port solid-state transformer from 200 kW to 400 kW in essentially the same power module footprint, at above 98.5% efficiency.
onsemi EPP Claims 3–5x Power Density
onsemi's Embedded Power Platform, launched September 16, 2026, uses the silicon wafer as the package substrate and claims 3-5x power density.
Resonac Grows 300mm SiC Single Crystal
Resonac says it grew and processed 300mm SiC single crystals on September 15, 2026, while 150mm remains its mainstay and 200mm shipments have just begun.
Navitas Ships First US-Made Gen 5 GaNFast
Navitas ships Gen-5 GaNFast from GlobalFoundries' Vermont fab in September 2026 on a 200mm GaN-on-Si line, ten months after their 2025 partnership.
Infineon Strengthens Vertical Power With C2i
Infineon announced the acquisition of C2i Semiconductors on August 24, 2026, adding substrate-integrated voltage regulators to its grid-to-core strategy.
Innoscience: All-GaN 140W and 1kW AC-DC Designs
Innoscience launched All-GaN AC-DC reference designs on June 29, 2026: 140W at 96.21% and 31.86W/in3, and 1kW at 97.1% and 60.6W/in3.
Power Integrations Hits Industry-First 2200V GaN
Power Integrations announced the first 2200V-rated PowiGaN on August 5, 2026, for 1500V data-center distribution, EV auxiliaries and solar inverters.
Nextpower Completes Zigor Power Deal
Nextpower closed its acquisition of Zigor's power-conversion business and Apex Power assets on July 30, 2026, targeting over 10GW online within 12 months.
RIR Power's India-First SiC Vertical Push
RIR Power Electronics, India's first vertically integrated SiC maker: an INR 6.18B Odisha campus, an NSE listing in July 2026, and FY2027 mass production.
Navitas and Magnachip: 3300V SiC licensing
Navitas licenses GeneSiC Gen4/Gen5 (1200V, 2300V and above 3300V) to Magnachip for localisation in Korea, targeting grid, industrial and storage over EVs.
STMicroelectronics Q2 2026: double-digit SiC growth and DC upside
STMicro Q2 2026: revenue $3.49B (+26% YoY) at 34.8% gross margin, double-digit SiC growth expected, and AI data-center targets raised above $1B for 2026.
GaN patent war: Infineon ITC win and Wolfspeed suit
Infineon won a final US ITC ban on Innoscience GaN imports and Wolfspeed sued Navitas: GaN patent fights have become a procurement risk.
SiC solid-state transformers: AIDC deployment begins
SiC solid-state transformers go commercial: Weiguang has shipped 100+ SSTs with 40GW booked, Delta packs MW-class into 1m2, and Eaton offers a 2.5MW MV SST.
SiC investment: EU approves EUR 659M, China raises capital
The European Commission approved EUR 659M for four German chip sites on July 14, 2026, including EUR 353M for Element 3-5's SiC epitaxial wafers.
India Semiconductor: CG Semi Starts OSAT Production
CG Semi started commercial OSAT production in Sanand, Gujarat on July 4, 2026, with capacity up to 300 million units a year and INR 76B planned over five years.
Power semis: Infineon expands, onsemi sells fabs
Infineon opened one of the world's largest power fabs in Dresden on July 2, 2026 with EUR 5B, while onsemi sells two fabs: expansion versus asset-light.
SiC/GaN 2026: China OEM demand
onsemi supplies EliteSiC for NIO's 900V platform and Geely's SEP system and partners with Innoscience on GaN, while Toshiba and ROHM add drivers and packages.
Practical Guide to Power Semiconductors for Grid Stabilization: STATCOM, HVDC, FACTS
Power semiconductors for STATCOM and HVDC: Mitsubishi Electric's +/-450MVAr record, Infineon's 4500V IGBT modules, LCC vs VSC, and procurement points.
Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT
Power electronics for water electrolysis: MW-class SiC adoption, grid code compliance, onsemi and Infineon PFC/DC-DC options, and CAPEX/OPEX trade-offs.
EV Charging Semis: OBC and DC Fast Charging
SiC/GaN adoption is accelerating for OBCs and DC fast charging. Covers 30% loss cuts, 50% density gains, 800V migration, V2X, and ASIL-D safety.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
Wolfspeed's Gen-5 SiC cuts specific on-resistance by up to 27% versus rival 1200V parts, spanning 1200V and 750V on a production-ready 200mm platform.
AQG 324 Automotive Qualification Guide
AQG 324 test requirements for humidity, power cycling, thermal shock and vibration, plus SiC MOSFET qualification hurdles and OEM demands.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
IGBT vs SiC MOSFET: device structure, conduction and switching losses, voltage and frequency ranges, cost, and how to choose per application.
India Semiconductor: OSAT and Design Onshore
Tata is building India's first assembly and test plant, TSAT, in Jagiroad, Assam for more than $3 billion, aiming for up to 48 million chips a day.
ASE 310mm PLP Line: Industry First for AI Chips
ASE developed the industry-first automated 310mm PLP line for AI/HPC chips, with 96,100mm² usable area and production starting 1H 2027.
Entegris/Inpria: EUV MOR Resist Cross-License
Entegris and JSR's Inpria cross-license EUV metal-oxide resist patents covering formulation, precursor synthesis and filtration, ending IPR2025-00267.
TDK: micro POL 'FS3303' Enters Mass Production
TDK began volume production of the FS3303 micro POL module on May 19, 2026: 2.5x2.5mm, 1.2mm high, 3A output and about 95% peak efficiency.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip's 3.3kV HV-D3 mSiC module with 6kV isolation halves series devices for 13.8kV and 34.5kV grid ties, covering 100-300A for data-center SSTs.
AIXTRON: FY2026 Guidance Raised on 30% Order Growth
AIXTRON Q1 2026: order intake of about EUR 171M (+30% YoY) on data-center optics demand, with FY2026 revenue guidance raised to about EUR 560M.
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba began sampling the 1200V trench-gate SiC MOSFET TW007D120E on May 20, 2026, improving Rds(on) x Qgd by about 52% over current products.
Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%
Mitsubishi Electric began sampling 8th-generation NX 1200V IGBT modules in May 2026, cutting power loss by up to 19%, for inverters, UPS and solar.
China IGBT Market: Is 30% Cheaper Worth It on TCO?
Is Chinese IGBT's 30%-lower price real competitiveness or a temporary offensive? We weigh the full TCO — AEC-Q101 cost, redesign hours, and supply risk.
Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs
ROHM's TOLL-package 750V SiC MOSFET SCT4013DLL, in volume since September 2025, is gaining traction in battery backup units for AI servers.
SiC Modules: Practical Thermal Design and TIM Selection
SiC power module thermal design: why TIM resistance dominates, liquid-cooling flow-rate examples, top-side vs double-sided packages, and power-cycle tests.
IGBT to SiC MOSFET: Evaluating TCO and Miniaturization
When to switch from IGBT to SiC: not device price, but how smaller cooling and passives change system BOM cost, plus hybrid SiC as a middle step.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Why Infineon raised full-year guidance at its FY2026 Q2 results, and what an upward revision signals to the rest of the supply chain.
Power Devices: Technology Outlook Beyond SiC and GaN
After SiC and GaN: gallium oxide, GaN-on-GaN and diamond compared on maturity, production timing, and what designers and buyers should do now.
SiC Suppliers: Alternative Sources to Reduce Wolfspeed Use
SiC alternatives to Wolfspeed compared: Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric and Chinese makers, for multi-sourcing.
Doosan Acquires SK Siltron: SiC Wafer Supply Shift 2026
Doosan acquires 100% of SK Siltron for ~5 trillion KRW. We assess the SiC wafer vertical-integration play despite a 414bn KRW impairment and covenant risk.
India Semis: Tata-ASML Partnership and First Fab Launch
Tata Electronics and ASML signed an MOU in May 2026, moving India's first advanced fab, the $11 billion Dholera project, from vision to execution.
Cyient Announces India's First GaN Power ICs
Cyient unveiled 650V GaN power ICs for AI, telecom, fast charging and e-mobility, aimed at higher conversion efficiency in next-generation designs.
GaN Market: Navitas Earnings and India Mass Production
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
Rohm: ¥158.4B SiC Impairment Loss and Industry Reform
ROHM booked a JPY 193.6 billion impairment in power semiconductors for FY ending March 2025, mainly on SiC fixed assets, for a JPY 158.4 billion net loss.
European OEMs: SiC Procurement Shift
VW, BMW, and Stellantis are redesigning SiC procurement. This article maps integration, long-term contracts, diversified sourcing, and Tier 1 impacts.
GaN-on-Si: The Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon below 650V, moving from EV on-board chargers into industrial motor control, telecom power and UPS. Adoption by application.
China IGBT Market: Self-Sufficiency Reshapes Supply
Chinese IGBT makers — BYD, Starpower, CRRC Times — are raising self-sufficiency and going global, reshaping competition with EU and Japanese suppliers.
Power Modules: Comparing Tier 1 Supplier Competitiveness
Six power-module suppliers compared, Infineon, onsemi, STMicro, Mitsubishi Electric, Fuji Electric and ROHM, on lineup, SiC capability, capacity and price.
SiC Market 2026: Demand Shift to Industrial as EV Slows
SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.
SiC Modules: Next-Gen Packaging and Thermal Design Trends
SiC module performance is limited by packaging: gel to epoxy and ceramic encapsulation, and the double-sided cooling structures that decide the next generation.
Solar Inverter Power Devices: Si IGBT vs SiC vs GaN
How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.
Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)
8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.
AI Server Power Supplies: GaN Adoption Criteria
Choosing GaN for AI server power supplies: where it beats SiC and Si on switching frequency, power density and thermal design, and where it does not.
BYD Expands 1200V SiC Output for In-House EV Inverters
BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.
Chinese SiC Manufacturers: Selection Criteria
Adopting Chinese SiC suppliers: what to verify and how, rather than deciding on country of origin or price alone. Quality, qualification and supply criteria.
EV Power Semiconductor Application Selection Matrix
SiC modules cost 2-3x silicon per inverter, yet EV makers keep switching. Which EV power conversion applications justify SiC, and which do not.
EV SiC Inverters: Loss Calculation and Range Improvement
One point of EV inverter efficiency is worth several kilometres of range. How to decompose the loss breakdown before expecting SiC to deliver gains.
SiC vs. GaN for EV Applications: Choosing the Right Material
800V EV platforms such as Taycan, IONIQ 6 and EV6 change device selection. Where SiC and GaN each fit across traction, on-board charging and auxiliaries.
Fuji Electric Unveils Next-Generation IGBT
Fuji Electric's 8th-generation IGBT claims large gains in both switching loss and on-voltage for EV inverters, just as silicon IGBT was being written off.
GaN Power Semis: Miniaturization and Efficiency Benefits
Silicon MOSFETs stall at tens of kHz while GaN switches into the MHz range, shrinking inductors and capacitors. What that changes in converter design.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
SiC is scaling toward the 2030s and GaN is spreading into data-center power. So where does silicon IGBT still win, and for how long?
Industrial Inverters: SiC MOSFET Reliability Evaluation
For industrial inverters the decisive SiC question is not loss or switching speed but short-circuit withstand, because duty differs from EV use.
Infineon CoolSiC Product Lineup Updates
Infineon's CoolSiC update should be read through voltage coverage, gate structure, short-circuit margin, and driver fit.
Infineon-SK Siltron SiC Wafer Deal Cuts Risk
Infineon signed a multi-year SiC wafer deal with SK Siltron in 2025, securing supply as the SiC wafer chain shifts to long-term contracts.
Japanese Power Semiconductor Trio's Integration Progress
Japan's three-way power semiconductor consolidation has been reported since 2025 with METI backing. What has actually been decided, and what has not.
Mitsubishi Electric: 8-inch SiC Substrates with Coherent
Mitsubishi Electric and Coherent agreed to jointly develop 8-inch SiC wafers, a shift from the 150mm standard that changes cost per chip.
onsemi SiC Business Performance Outlook
onsemi's SiC business faces slower EV electrification in Europe and the US and repeated guidance cuts, yet its SiC investment stance has not changed.
Power Semiconductor Market Restructuring Map 2026
SiC is forecast to pass $10 billion by 2030, yet the conversation has moved from growth to realignment: less who wins the market, more who survives.
Foundations for Power Semiconductor Supplier Evaluation
Comparing SiC MOSFET datasheets is not enough: measurement conditions change what the numbers mean, and reliability data is formatted differently by vendor.
Renesas Acquires Transphorm GaN Business
Renesas agreed to acquire Transphorm, a pioneer of GaN-on-SiC vertical GaN structures, reshaping its power semiconductor portfolio.
Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed
Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.
Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET
Evaluating ROHM's Gen-5 SiC MOSFET: beyond datasheet specs to protection-circuit compatibility and thermal design, building on Gen-4's low RonA.
Power Semi Majors: Investment Strategies for SiC, GaN, IGBT
EV inverters, industrial efficiency and data-center density pull at once. Where the majors invest, defend and divest across SiC, GaN and IGBT.
SiC 8-inch Wafer Supply System
SiC wafers are moving from 150mm to 200mm, but a stable supply chain lags the transition. How to judge the pace from design and procurement.
SiC and GaN Business Opportunities: Evaluation Criteria
SiC or GaN is the wrong question alone: they differ in voltage range, switching domain and cost, so the answer depends on application and timing.
Key Considerations for Selecting SiC Gate Drivers
SiC dies are smaller and denser, so temperature rises far faster in a short circuit than with silicon. What that means for gate driver and protection design.
SiC Modules vs. Discrete Components: Selection Criteria
SiC module or discrete is not just a packaging choice: it decides system performance, board area, protection design and procurement flexibility.
SiC Wafer Price Trends and 2026 Outlook
SiC demand grew slower than planned in 2024 and production plans were revised. What that plateau means for wafer prices heading into 2026.
Navigating SiC Wafer Procurement Risks
SiC wafer supply is the bottleneck after design freeze. Where in the process bottlenecks form, and how to structure procurement risk around them.
STMicroelectronics Ampere SiC Power Modules for EV 2026
STMicroelectronics and Ampere are targeting 2026 commercialization of SiC power modules for next-generation EV traction inverters.
STMicroelectronics SiC New Fab: Mass Production Progress
STMicroelectronics keeps expanding its SiC fab in Catania. Why the scale and timing of the investment signal more than a simple capacity increase.
Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%
Toshiba's Triple-Gate IGBT claims up to 40% lower loss. In railways and large inverters even 1% changes cooling cost and annual electricity bills.
Wolfspeed: Changing SiC Procurement Risks Post-Restructure
Wolfspeed after Chapter 11: Mohawk Valley still runs at low-20s utilization, moving SiC sourcing risk from insolvency to utilization dependency.