Power Semiconductors
Wolfspeed
A major SiC wafer and device player. Financial risk, long-term supply agreements, and alternative sourcing are key themes.
Articles
Articles about this company
Renesas and Wolfspeed Sign 10-Year SiC Wafer Supply Agreement
Renesas Electronics and Wolfspeed have signed a 10-year long-term supply agreement for SiC wafers, a duration that highlights the significance of this unprecedented pact in the semiconductor industry, moving beyond a buyer's market for SiC wafer procurement.
SiC Alternative Supplier Comparison — A Practical Guide to Reducing Wolfspeed Dependency
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Renesas Acquires Transphorm GaN Business
Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.
Wolfspeed: Managing Risks and Alternative Sourcing Strategies
Wolfspeed's financial struggles have long been a topic of industry discussion, but a significant gap remains between recognizing "management risk" and deciding "how to address it next." This article aims to bridge that gap by outlining the structure of the risks and exploring practical alternative sourcing options.
Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
SiC Wafer Geopolitics: What Doosan's Acquisition of SK Siltron Signals
South Korea's Doosan announces a full 100% stake acquisition of SK Siltron in a deal valued at approximately 5 trillion KRW. We examine the vertical integration strategy moving forward despite a 414 billion KRW impairment in the SiC business and 1.2 trillion KRW in covenant issues, and place it in the context of Japan-Korea supply chain cooperation.
Rohm's SiC Business: A Look at the 158.4 Billion Yen Loss - Excess Inventory, Denso Partnership, and Merger Talks with Toshiba Mitsubishi-Electric
ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.
European OEM SiC Procurement Strategies — Reading the Impact on Japanese Tier 1 Suppliers
Major European OEMs including VW, BMW, and Stellantis are redesigning their SiC procurement strategies. Amid a mix of three approaches — vertical integration, long-term contracts, and diversified sourcing — this article examines the implications for Japanese Tier 1 suppliers and the directions they should consider.
SiC Demand at an Inflection Point — How EV Slowdown Has Opened Industrial Market Opportunities
Slower EV demand growth has prompted a downward revision of SiC market forecasts. Meanwhile, demand from industrial equipment, solar, and data centers is expanding faster than expected, and demand diversification is taking hold as a structural shift. We examine the implications for evaluating supplier demand portfolios.
SiC Module Packaging Technology Trends — How Next-Generation Packages Are Redefining Thermal Design
Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.