Power Semiconductors
Wolfspeed
A major SiC wafer and device player. Financial risk, long-term supply agreements, and alternative sourcing are key themes.
Articles
Articles about this company
Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed
Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.
Wolfspeed: Changing SiC Procurement Risks Post-Restructure
Wolfspeed emerged from Chapter 11 in September 2025. While the risk of financial insolvency has been resolved, the Mohawk Valley Fab continues to run at utilization rates in the low 20s, shifting the fundamental risk from 'bankruptcy concern' to 'utilization-rate dependency.' Drawing on the strategic equity relationship with Renesas and Q3 FY2026 results, this article reexamines the evaluation criteria for SiC procurement.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
SiC Suppliers: Alternative Sources to Reduce Wolfspeed Use
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Renesas Acquires Transphorm GaN Business
Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.
Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT
An overview of power electronics for water electrolysis systems in green hydrogen production. Explains the adoption of MW-class SiC, grid code compliance, onsemi/Infineon PFC/DC-DC solutions, and insights on CAPEX/OPEX.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.
Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs
ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.