Sector Signals
← Reports

Power Semiconductors

Power Semiconductor Market Report 2026 — SiC/GaN Supplier Comparison

2026 power semiconductor market report: vendor competitiveness, mass-production track record, price-reduction headroom, and supply continuity across SiC/GaN suppliers — delivered in PDF, Markdown, and JSONL.

PDFMarkdownJSONL
View free sample (PDF, no sign-up)

What This Report Helps You Understand

Companies

14

Major Japanese, US, European, and Chinese power semiconductor players.

Materials

SiC / GaN / Si IGBT

Covers both next-generation materials and the remaining role of silicon devices.

Formats

PDF + Markdown + JSONL

Designed for reading, sharing, and direct use in LLM workflows.

Time horizon

2026-2030

Separates near-term events from mid-term production and cost changes.

Formats

PDF

Fixed-layout edition for reading, sharing, and printing.

Markdown

Editable text for LLM workflows, internal notes, and table reuse.

JSONL

Structured fact data, one record per line, ready for RAG and API pipelines.

Chapters

Tap a chapter for details
1Executive SummaryA concise view of demand recovery, 200 mm wafer migration, Japanese consolidation, and Chinese supplier expansion.
  • Demand shifts across EVs, datacenters, and industrial applications
  • How 200 mm SiC wafers affect cost competitiveness
  • Japanese consolidation and Chinese capacity expansion
  • Decision points across demand, technology, supply, and policy
2Market StructureBreaks down power semiconductors by application, region, and material transition.
  • Market-size estimates and growth ranges toward 2030
  • xEV, industrial, renewable-energy, AI datacenter, consumer, and ICT demand
  • Early demand signals for GaN in AI server power supplies
  • Investment and policy trends across Japan, the US, Europe, China, and Southeast Asia
3Technology TrendsCompares SiC, GaN, and Si IGBT by adoption domain, economics, and reliability considerations.
  • Where Si IGBT can remain competitive beyond seventh-generation devices
  • SiC MOSFET migration from 6 inch to 8 inch wafers
  • GaN on Si and GaN on SiC economics for AI server power
  • Reliability points such as short-circuit ruggedness, certification, and packaging parasitics
4Company AnalysisProfiles major Japanese, US, European, and Chinese suppliers by product area, mass-production status, and risk.
  • Positioning by SiC, GaN, Si IGBT, and module capabilities
  • Vendor-selection matrices by application
  • Mass-production track record and supply-continuity signals
  • Material-specific adoption candidates and risk factors

Sourced Facts (Excerpt)

A sample of the sourced facts included in the report. Every figure, contract, and technical spec is tied to published primary sources.

Verified

Renesas signed a 10-year SiC wafer supply agreement with Wolfspeed, securing materials procurement for SiC mass production from 2025.

Under the agreement, Renesas will receive supplies of SiC bare wafers and epitaxial wafers from Wolfspeed for 10 years.

Sourcerenesas.com2026-05-07
Verified

Mitsubishi Electric is jointly developing 8-inch SiC substrates with Coherent to pursue a stable supply of SiC power semiconductors.

Mitsubishi Electric is strengthening its partnership with Coherent through joint development of high-quality 8-inch SiC substrates for use at its new factory building in the Shisui area of Kumamoto Prefecture.

Sourcemitsubishielectric.co.jp2026-05-07
Verified

Infineon states that it has more than six qualified suppliers of SiC wafers and boules.

Its Q2 FY2024 investor materials list more than six qualified SiC wafer and boule suppliers as its SiC sourcing base.

Sourceinfineon.com2026-05-07
Verified

As of December 2024, Navitas stated that it had shipped more than 240 million GaN devices and about 30 million SiC devices.

Navitas's annual report states that, as of December 2024, it had shipped more than 240 million GaN devices and about 30 million SiC devices.

Sourcesec.gov2026-05-07
Verified

Toshiba developed Triple-Gate IGBT technology that reduces overall switching loss by up to 40.5%.

The new silicon IGBT structure and gate-control technology achieve reductions of 50% in turn-on loss, 28% in turn-off loss, and up to 40.5% overall versus conventional technology.

Sourceglobal.toshiba2026-05-07
Verified

Fuji Electric's seventh-generation IGBT module, the X Series, reduces inverter power loss by 10% compared with conventional products.

The X Series reduces inverter power loss by 10% and chip temperature by 11°C compared with conventional products.

Sourcefujielectric.co.jp2026-05-07

Questions to Bring Into the Report

  • Which suppliers benefit most from the transition to 8 inch SiC wafers?
  • How much demand upside could GaN capture in AI datacenter power supplies?
  • Where does continued Si IGBT adoption remain economically rational?
  • What product-line and supply-continuity risks could arise from Japanese consolidation?
  • Which Chinese suppliers are most likely to intensify pricing pressure?
  • How far can public information support supplier evaluation?

Covered Companies

BYD SemiconductorCRRC Times ElectricFuji ElectricInfineonMitsubishi ElectricNavitas SemiconductoronsemiRenesas ElectronicsROHMBorgWarner / Semikron DanfossSilan MicroelectronicsSTMicroelectronicsToshiba Device & StorageWolfspeed

Use Cases

  • Align supplier-comparison criteria
  • Map adoption domains for SiC, GaN, and Si IGBT
  • Load the report into an LLM and reorganize it for internal use
  • Review production, technology, and supply-continuity signals by company