Adoption of GaN (gallium nitride) power devices is expanding from its beachhead in EV on-board chargers (OBCs) into the industrial sector. While SiC primarily excels in high-voltage applications above 800V, GaN-on-Si's competitive advantage lies in its ability to simultaneously achieve high switching frequency, compact form factor, and low loss in the mid-voltage range below 650V. As of 2026, GaN adoption is accelerating for industrial power supplies, telecom infrastructure, and data centers, with silicon power device displacement entering full swing.
The Physical Advantages of GaN-on-Si — Why High-Frequency, Low-Loss Operation Is Achievable
GaN has approximately three times the bandgap of silicon (3.4 eV), higher electron mobility, and a higher saturation electron velocity. This combination of properties enables on-resistance to be dramatically reduced compared to Si MOSFETs at the same die area while simultaneously achieving high breakdown voltages. In particular, the GaN-on-Si device structure (HEMT: High Electron Mobility Transistor) provides a two-dimensional electron gas (2DEG) channel with high electron mobility, allowing switching speeds 10–20 times that of silicon.
What changes when switching speed increases? Since switching losses scale with frequency, designs that would run at 100 kHz with conventional Si MOSFETs can operate at 1 MHz or above with GaN-on-Si. Higher switching frequency means smaller smoothing capacitors and inductors. This is what directly translates into reductions in power system volume and weight.
Differentiating GaN-on-Si, GaN-on-GaN, and SiC
The choice of GaN substrate maps directly to application segmentation. GaN-on-Si uses silicon wafers, keeping manufacturing costs low and making volume ramp-up straightforward. GaN-on-GaN (GaN on native GaN substrate) can handle even higher frequencies and voltages with greater electron mobility, but at a dramatically higher cost. For industrial applications, GaN-on-Si is the practical and widely adopted solution.
GaN-on-Si (Industrial Mainstream)
Uses silicon substrates, allowing existing semiconductor manufacturing lines to be leveraged. Highly cost-competitive and in volume production for power supplies and motor control below 650V. EPC, Navitas, and STMicro are the primary suppliers. Compatible with 8-inch wafer manufacturing, with further cost reductions expected going forward.
GaN-on-GaN (RF and Specialty Applications)
Native substrate yields high crystal quality, enabling high-voltage operation in the kilovolt range. Primarily used in RF amplifiers for telecom base stations and research applications. Manufacturing costs are high, limiting adoption in industrial power supplies. Future adoption in voltage ranges above 1,700V remains at the research stage.
SiC (High-Voltage Competitor)
SiC has the advantage in high-voltage, high-temperature environments above 650V. Its primary domains are EV main drives, rail traction, and large industrial inverters. A clear voltage-range segmentation exists between GaN-on-Si and SiC, and designers use both according to the application.
Adoption Status by Industrial Application
Data Center Power Supplies (PSUs)
GaN adoption is expanding in the down-conversion stage from the 48V intermediate bus to 12V. Switching frequencies can be set above 1 MHz, enabling dramatic miniaturization of inductors and capacitors. Adoption in PSU designs for Tier 1 OEMs is on record. GaN is becoming a key enabler for achieving 80 PLUS Titanium grade (efficiency exceeding 96%).
Industrial Motor Control (Low-Voltage Range)
GaN adoption is beginning in small motor drives in the 200V class. For BLDC control and servo amplifier applications, the reduction in current ripple and the smaller enclosure footprint enabled by high switching frequency are valued. Tightening energy efficiency regulations for FA (factory automation) equipment are serving as a tailwind for adoption.
Telecom Infrastructure Power Supplies (48V Systems)
GaN adoption is progressing in power supply units for 5G base stations. It is reported to reduce footprint by 30–40% versus conventional silicon, contributing to lower installation and maintenance costs for base stations. Global 5G base station rollout is providing a long-term demand foundation.
EV Chargers and OBCs
On-board chargers (OBCs) for EVs were the pioneering application for GaN adoption. GaN is expanding in rapid OBCs above 22 kW, and automotive-grade reliability track records are accumulating. Requirements for smaller and more efficient chargers are encouraging designers to choose GaN.
GaN-on-Si-Specific Design Considerations — Two Things to Know Before Adopting
GaN-on-Si delivers high performance but has design considerations that differ from Si MOSFETs. Understanding these from both a procurement and design perspective leads to smoother adoption.
Dynamic On-Resistance Increase (Dynamic Rds(on)): GaN-on-Si devices exhibit a phenomenon in which Rds(on) temporarily increases in the on-state after switching. This increase is caused by trap states and becomes more pronounced under high-temperature, high-duty-cycle conditions. Manufacturers have made significant improvements between 2023 and 2025, but for designs operating near rated current, verification through actual measurement is essential.
Gate Drive Design Constraints: Enhancement-mode (eGaN) GaN-on-Si devices have a lower gate threshold voltage than Si MOSFETs (1–2V), creating a risk of false triggering due to noise. Gate drive circuit layout and PCB design require greater precision than with silicon. The level of supplier support in this area influences supplier selection.
Breadth of Reference Designs
Major suppliers (EPC, Navitas, STMicro, TI) publish application-specific reference designs. Confirming before adoption whether a reference design close to your target application is available can dramatically reduce design man-hours.
Availability of LTSpice and PLECS Models
Confirm whether device models for simulation are provided. If not, circuit simulation accuracy suffers and prototype rework increases.
Application Engineering Support
Evaluate whether technical support is available for GaN-on-Si-specific gate drive design and PCB layout. In the early stages of industrial adoption, technical challenges are numerous, and support quality often determines whether adoption succeeds.
Comparison and Characteristics of Leading Suppliers
EPC (Efficient Power Conversion)
Pioneer of eGaN FETs. Strong in high-reliability products for industrial, medical, and aerospace applications. Packageless (land grid array) direct-mount to PCB is a distinctive feature. Best suited for compact, high-frequency designs.
Navitas Semiconductor
Offers GaN power ICs with integrated driver ICs via GaNFast technology. Lower design complexity, with broad adoption in AC/DC adapters, OBCs, and industrial power supplies. The brand has been maintained following Infineon's completed acquisition.
STMicroelectronics
Offers integrated driver power stages via MastGaN technology. Strong track record in European industrial and home appliance applications. Has the advantage of being able to propose total power solutions combining GaN with SiC products.
Texas Instruments
Focuses on data center and telecom infrastructure applications with LMG-series GaN power ICs. TI's extensive peripheral IC ecosystem is a strength, and the richness of evaluation boards and design tools is high.
Key Evaluation Points for Supplier Selection
When evaluating GaN-on-Si suppliers, the primary criteria are product roadmap, application support capability, and the breadth of the voltage rating lineup. In addition, given GaN-on-Si-specific challenges such as dynamic on-resistance (Rds(on) increase) and gate drive circuit design constraints, the quality of application design support has a significant impact on deployment speed. It is important to verify the track record of technical support in advance before making an adoption decision.
From a long-term procurement perspective, as GaN-on-Si demand surges along with expanding data center investment, confirming major suppliers' production capacity expansion plans and long-term supply commitment policies is the starting point for supply risk management. For industrial applications, it is advisable to confirm suppliers' EOL (end-of-life) notification policies in advance and establish parts procurement plans that accommodate equipment lifespans of 20–25 years.