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Power Semiconductors

SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk

Coverage: supplierClear filter
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SiC Alternative Supplier Comparison — A Practical Guide to Reducing Wolfspeed Dependency

Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.

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European OEM SiC Procurement Strategies — Reading the Impact on Japanese Tier 1 Suppliers

Major European OEMs including VW, BMW, and Stellantis are redesigning their SiC procurement strategies. Amid a mix of three approaches — vertical integration, long-term contracts, and diversified sourcing — this article examines the implications for Japanese Tier 1 suppliers and the directions they should consider.

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The IGBT Market Shifts — How Chinese Manufacturers Are Changing the Procurement Landscape

Chinese IGBT manufacturers such as BYD Semiconductor, Starpower Semiconductor, and CRRC Times are rapidly increasing domestic self-sufficiency and accelerating their entry into global markets. Intensifying price competition and concerns about oversupply are reshaping the competitive landscape against European and Japanese suppliers. This article examines the procurement implications.

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Comparing the Competitiveness of Power Module Tier 1 Suppliers

This article benchmarks six leading power module suppliers — Infineon, onsemi, STMicro, Mitsubishi Electric, Fuji Electric, and Rohm — across four dimensions: product lineup, SiC capability, supply capacity, and price competitiveness. The findings are intended as a reference for procurement source selection.

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SiC Demand at an Inflection Point — How EV Slowdown Has Opened Industrial Market Opportunities

Slower EV demand growth has prompted a downward revision of SiC market forecasts. Meanwhile, demand from industrial equipment, solar, and data centers is expanding faster than expected, and demand diversification is taking hold as a structural shift. We examine the implications for evaluating supplier demand portfolios.

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Power Device Selection Logic for Solar Inverters

Solar power conditioning systems (PCS) use Si IGBT, SiC MOSFET, and GaN-on-Si selectively depending on application type and output scale. We examine the decision criteria for device selection, the positioning of major suppliers, and key procurement considerations.

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AI Server Power Supplies: GaN Adoption Criteria

Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.

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Chinese SiC Manufacturers: Selection Criteria

Many teams are internally divided on whether to adopt Chinese SiC manufacturers, with some voicing concerns about quality and others emphasizing the undeniable cost factor, but responding to this question with a simple "not adopting because it's Chinese" or "adopting because it's cheap" is too simplistic a judgment; what is being asked is how and what to verify.

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Foundations for Power Semiconductor Supplier Evaluation

A design team preparing for high-volume production of EV inverters faced an initial hurdle in selecting SiC MOSFET suppliers: "We don't know which datasheets to compare." Simply juxtaposing spec sheets proved insufficient as measurement conditions altered the meaning of figures, and reliability data was presented in inconsistent formats across different companies.

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Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET

As the next generation of SiC MOSFETs emerges, many companies are asking, "We want to evaluate the 5th generation, but where do we start?" Considering Rohm's announced 4th generation features of low on-resistance (RonA) and high short-circuit withstand capability, evaluation of the 5th generation must go beyond device specifications alone, encompassing compatibility with protection circuits and thermal design considerations.

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SiC and GaN Business Opportunities: Evaluation Criteria

SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.

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SiC Modules vs. Discrete Components: Selection Criteria

Once the decision to use SiC is made in the early stages of inverter design, the next question is whether to opt for modules or discrete components, a choice that, while appearing to be merely an implementation form, fundamentally impacts system performance, board area, protection circuit design, and procurement flexibility.