Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
Power Integrations Hits Industry-First 2200V GaN
Power Integrations announced on August 5, 2026 the industry's first 2200V-rated PowiGaN technology. Target applications span AI data center 1500V distribution, EV auxiliary power, and solar inverters — moving GaN into voltage territory long dominated by SiC.
Navitas and Magnachip: 3300V SiC licensing
On July 23, 2026, Navitas announced it will license GeneSiC Gen4/Gen5 technology, covering 1200V, 2300V, and above 3300V, to Magnachip. Magnachip will transfer and localize the technology at its Korean fab. The target is high-voltage grid infrastructure, industrial electrification, and energy storage rather than EVs, showing SiC competition broadening from automotive into power and industrial markets.
SiC/GaN 2026: China OEM demand
After the impairment cycle, SiC/GaN is shifting on both demand and technology. onsemi is supplying EliteSiC for NIO's 900V move and Geely's SEP system, partnering with Innoscience on GaN, while Toshiba and ROHM add new driver and cooling packages.
Practical Guide to Power Semiconductors for Grid Stabilization: STATCOM, HVDC, FACTS
A comprehensive overview of power semiconductors for STATCOM and HVDC systems, which are seeing increased demand due to renewable energy integration. Covers Mitsubishi Electric's ±450MVAr track record, Infineon's 4500V IGBT modules, LCC vs. VSC technology selection, and procurement insights.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
Power Devices: Technology Outlook Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
GaN Market: Navitas Earnings and India Mass Production
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
GaN-on-Si: The Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.
SiC Modules: Next-Gen Packaging and Thermal Design Trends
Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.
AI Server Power Supplies: GaN Adoption Criteria
Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.