Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
Practical Guide to Power Semiconductors for Grid Stabilization: STATCOM, HVDC, FACTS
A comprehensive overview of power semiconductors for STATCOM and HVDC systems, which are seeing increased demand due to renewable energy integration. Covers Mitsubishi Electric's ±450MVAr track record, Infineon's 4500V IGBT modules, LCC vs. VSC technology selection, and procurement insights.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
Power Devices: Technology Outlook Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
GaN Market: Navitas Earnings and India Mass Production
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
GaN-on-Si: The Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.
SiC Modules: Next-Gen Packaging and Thermal Design Trends
Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.
AI Server Power Supplies: GaN Adoption Criteria
Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.