Power Semiconductors
Renesas Electronics
Renesas is tracked through its SiC wafer supply agreement with Wolfspeed and GaN expansion through the Transphorm acquisition.
Articles
Articles about this company
Renesas Acquires Transphorm GaN Business
Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.
Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed
Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.
Wolfspeed: Changing SiC Procurement Risks Post-Restructure
Wolfspeed emerged from Chapter 11 in September 2025. While the risk of financial insolvency has been resolved, the Mohawk Valley Fab continues to run at utilization rates in the low 20s, shifting the fundamental risk from 'bankruptcy concern' to 'utilization-rate dependency.' Drawing on the strategic equity relationship with Renesas and Q3 FY2026 results, this article reexamines the evaluation criteria for SiC procurement.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.
Power Devices: Technology Outlook Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
SiC Suppliers: Alternative Sources to Reduce Wolfspeed Use
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Solar Inverter Power Devices: Si IGBT vs SiC vs GaN
How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.
Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)
8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.
SiC vs. GaN for EV Applications: Choosing the Right Material
The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si