Power Semiconductors
Renesas Electronics
Renesas is tracked through its SiC wafer supply agreement with Wolfspeed and GaN expansion through the Transphorm acquisition.
Articles
Articles about this company
Renesas Acquires Transphorm GaN Business
Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.
Renesas and Wolfspeed Sign 10-Year SiC Wafer Supply Agreement
Renesas Electronics and Wolfspeed have signed a 10-year long-term supply agreement for SiC wafers, a duration that highlights the significance of this unprecedented pact in the semiconductor industry, moving beyond a buyer's market for SiC wafer procurement.
Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
SiC Alternative Supplier Comparison — A Practical Guide to Reducing Wolfspeed Dependency
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Wide Bandgap Semiconductor Manufacturing Cost Trends — Reading the SiC and GaN Cost Curves
The shift to 8-inch SiC wafers and improvements in GaN-on-Si epitaxial growth are reshaping the cost structure of wide bandgap semiconductors. We examine the outlook for when the price gap versus silicon will narrow, and the key manufacturing technology factors driving cost reduction.
SiC vs. GaN for EV Applications: Choosing the Right Material
The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Comparing Investment Strategies for SiC, GaN, and IGBT by Major Semiconductor Manufacturers
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.
SiC and GaN Business Opportunities: Evaluation Criteria
SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.
AI Server Power Supplies: GaN Adoption Criteria
Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.