On June 29, 2026, Innoscience simultaneously launched two fully GaN AC-DC power reference designs: the 140W INNDAD140C1 and the 1kW INNDAD1K0A1. The "All GaN" designs use the company’s own GaN devices throughout the main power circuits, extending its coverage across a much wider output range.
Publishing a reference design is more than a technology demonstration. By disclosing circuit topology, component selection, and measured thermal data, it can reduce power-supply makers’ design effort and certification costs. For Innoscience, it is also a strategic way to secure adoption of its devices early in the design cycle.
Fitting 140W into 60×60mm: the race to shrink fast chargers
The PD3.1 fast-charger market is competing to make enclosures thinner and smaller without sacrificing output. INNDAD140C1 offers one answer: a 60×60×20mm PCBA and 31.86W/in³ power density. It supports 90–264Vac input and delivers up to 28V/5A (140W) using a PFC plus AHB (asymmetric half-bridge) topology, with PFC switching at 140kHz and AHB at 130kHz.
Input-voltage conditions matter when reading conversion efficiency. The 96.21% peak is measured at 264Vac; for Japan’s common 100V supply, 94.25% at 90Vac is closer to real-world performance. Even so, efficiency in the 94% range is well above mid-range silicon designs and presents a practical reason to move to GaN.
The chart shows that there is less efficiency headroom at lower input voltages. Specifications for globally marketed products should state the input-voltage condition used as the efficiency reference.
For production certification, compliance with the EN55022 EMI standard has been confirmed. Measured thermal evaluation recorded maximum temperatures of 92.1°C for the PFC inductor and 81.1°C for the transformer, indicating balanced heat dissipation. A reference design with verified EMI compliance and measured values can serve directly as a prototype starting point for OEMs and ODMs seeking to reduce certification effort.
Entering SiC’s core territory at 1kW
Industrial power supplies in the 1kW class have traditionally been an area where SiC held a performance advantage. Innoscience’s INNDAD1K0A1 enters that space with a bridgeless totem-pole PFC plus high-frequency LLC topology operating from 200–600kHz. It delivers 97.1% peak conversion efficiency and 60.6W/in³ in a 143×70×27mm PCBA.
The difference in power density from the 140W design is worth noting.
One reason the 1kW design achieves roughly 1.9 times the power density is the LLC converter’s wide-band operation. The 200–600kHz range shrinks passive components, but also makes switching losses an issue. GaN’s lower switching losses versus silicon allow more operating margin in this frequency range. Without reliable operation at these frequencies, 60.6W/in³ would not be attainable.
Output voltage is 36–54.6V (48V nominal), targeting robots, electric-motorcycle onboard chargers, and communications equipment. There is an important input-power caveat: it provides up to 500W at 90–176Vac, and reaches the full 1kW only at 176–264Vac. A single board can cover both global 100V and 200V systems, but the halved output limit on 100V systems should be stated in procurement specifications for global industrial equipment.
Lowering adoption barriers: package compatibility and integrated current sensing
The first question design teams face in moving to GaN is how much of an existing PCB layout can be reused. Innoscience offers two concrete answers.
First is the package compatibility of the low-voltage GaN device INN150EB022EAD used in the 1kW design’s synchronous-rectification stage. Its EN-FCLGA 5×6 package shares a footprint with existing DFN5×6 silicon MOSFETs, allowing a move to GaN without major PCB-layout or thermal-design changes. It is not a simple drop-in replacement because operating frequency and heat distribution change, but optimizing an existing board requires far less development work than starting from a blank sheet. The ability to retain invested board and tooling assets can affect adoption decisions for cost-sensitive manufacturers.
Second is the integrated current sensing in the 700V GaN device ISG6117TM used in the 140W design’s PFC stage. This TO252-4L, 210mΩ device uses a co-packaged design with a lossless current-sensing circuit. Eliminating an external resistor directly reduces the BOM and mounting area while also helping efficiency at 90Vac.
What the two-product launch says about strategy and design adoption
Topology
140W: PFC plus AHB (asymmetric half-bridge) / 1kW: bridgeless totem-pole PFC plus high-frequency LLC (200–600kHz)
Efficiency and power density
140W: 96.21% peak and 31.86W/in³ / 1kW: 97.1% peak and 60.6W/in³. Both use only the company’s GaN devices in the main power circuits.
Target applications
140W: PD3.1 fast charging for laptops and game consoles / 1kW: medium- and high-power applications for robots, electric motorcycles, and communications equipment
Migration support
140W: EN55022 EMI compliance and measured thermal evaluation disclosed / 1kW: DFN5×6 silicon MOSFET-compatible package and a single global design
Launching 140W and 1kW designs together rapidly builds a reference portfolio from compact consumer charging through medium- and high-power industrial applications, lowering customers’ barriers to design entry. Even amid geopolitical risk from the ITC ruling that bars imports and sales into the United States following Infineon’s case, Innoscience is visibly pursuing wider GaN adoption in Asian and European markets.
A reference design is not itself a production specification. It must be checked against a company’s input-voltage requirements, output specifications, and thermal environment. Still, disclosed verified EMI limits and measured thermal data can substantially shorten evaluation. How designers use devices that reduce migration cost—through package compatibility and integrated current sensing—may become one axis determining the speed of GaN adoption.