Data Tracker

Power Semiconductor Supply & Capacity Tracker

A living tracker of major power-semiconductor makers' SiC wafer migration (6→8 inch), recent capacity/impairment moves, key supply agreements, and EV exposure — organized by primary source. A supply-risk index is planned.

as of 2026-06-07

Major suppliers covered

Migrating to 200mm / 8-inch SiC

4regions

Japan, US, Europe, China

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Japan

ROHM

SiC wafer migration (6→8 inch): Preparing 200mm SiC mass production; Gen5 SiC MOSFET
EV exposure: Medium (long-term auto/industrial base)
Recent moves (capacity / impairment / product): SiC impairment in FY2025; continued capacity expansion
Key supply agreements / partnerships: SiC collaboration with Toshiba; automotive BBU products

Primary source Explainer: Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET Explainer: Rohm: ¥158.4B SiC Impairment Loss and Industry Reform

Mitsubishi Electric

SiC wafer migration (6→8 inch): SiC capacity investment; 200mm substrate work with Coherent
EV exposure: Medium (spread across industrial, rail, auto)
Recent moves (capacity / impairment / product): Next-gen IGBT/SiC modules; 1200V samples
Key supply agreements / partnerships: 200mm SiC substrate collaboration with Coherent

Primary source Explainer: Mitsubishi Electric: 8-inch SiC Substrates with Coherent Explainer: Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Fuji Electric

SiC wafer migration (6→8 inch): Expanding SiC capacity (Aomori, etc.)
EV exposure: Low-Medium (industrial/power centric)
Recent moves (capacity / impairment / product): Next-gen IGBT; expanding SiC for industrial/auto
Key supply agreements / partnerships: Primarily domestic supply

Primary source Explainer: Fuji Electric Unveils Next-Generation IGBT

Toshiba Device & Storage

SiC wafer migration (6→8 inch): Expanding SiC capacity at Kaga Toshiba (Ishikawa)
EV exposure: Medium (auto/industrial)
Recent moves (capacity / impairment / product): Loss reduction with triple-gate IGBT; SiC MOSFET (QDPAK)
Key supply agreements / partnerships: SiC collaboration with ROHM

Primary source Explainer: Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%Explainer: Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Renesas Electronics

SiC wafer migration (6→8 inch): SiC mass-production plan at Takasaki; GaN via Transphorm
EV exposure: Medium (auto-centric; SiC new entrant)
Recent moves (capacity / impairment / product): Acquired Transphorm for GaN; in-housing SiC
Key supply agreements / partnerships: 10-year SiC wafer supply with Wolfspeed

Primary source Explainer: Renesas Acquires Transphorm GaN Business Explainer: Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed

United States

onsemi

SiC wafer migration (6→8 inch): In-house 200mm SiC substrate ramp
EV exposure: High (EV SiC at the core)
Recent moves (capacity / impairment / product): Shipment adjustments amid EV slowdown; focus on AI datacenter recovery
Key supply agreements / partnerships: Vertical integration (substrate to module)

Primary source Explainer: onsemi SiC Business Performance Outlook Explainer: AI Data Centers: Recovery Signs in onsemi/Infineon Q1-Q2

Wolfspeed

SiC wafer migration (6→8 inch): 200mm SiC pure-play; Mohawk Valley online; vertically integrated
EV exposure: Very high (dependent on EV long-term contracts)
Recent moves (capacity / impairment / product): Filed Chapter 11 in Jun 2025, emerged Sep 29 cutting ~$4.6B (~70%) debt; EV slowdown, Chinese competition, NY fab ramp delays cited
Key supply agreements / partnerships: 10-year SiC wafer supply with Renesas and others

Primary source Explainer: Wolfspeed: Changing SiC Procurement Risks Post-Restructure Explainer: Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed

Navitas Semiconductor

SiC wafer migration (6→8 inch): GaN-centric (GaNFast) plus SiC
EV exposure: Low (mobile/datacenter power centric)
Recent moves (capacity / impairment / product): Growth in GaN/SiC for AI datacenter power
Key supply agreements / partnerships: Fab-lite (foundry-based)

Primary source Explainer: GaN Market: Navitas Earnings and India Mass Production

Europe

Infineon

SiC wafer migration (6→8 inch): Scaling 200mm SiC production (Villach/Kulim)
EV exposure: Medium (spread across auto, industrial, power)
Recent moves (capacity / impairment / product): Expanding CoolSiC; strengthening GaN/SiC for AI datacenter power
Key supply agreements / partnerships: Long-term SiC wafer supply with SK Siltron and others

Primary source Explainer: Infineon CoolSiC Product Lineup Updates Explainer: Infineon and SK Siltron Sign SiC Wafer Supply Agreement

STMicroelectronics

SiC wafer migration (6→8 inch): Building an integrated 200mm SiC site in Catania, Italy
EV exposure: High (high share of automotive SiC)
Recent moves (capacity / impairment / product): Expanding integrated SiC production; cost adjustments amid soft demand
Key supply agreements / partnerships: SiC JV with China's Sanan (Chongqing)

Primary source Explainer: STMicroelectronics SiC New Fab: Mass Production Progress Explainer: STMicroelectronics Ampere SiC Power Modules for EV 2026

Semikron Danfoss

SiC wafer migration (6→8 inch): Module specialist (chips mostly sourced externally)
EV exposure: Medium (automotive/industrial modules)
Recent moves (capacity / impairment / product): Expanding automotive SiC power modules
Key supply agreements / partnerships: Sources chips from various makers to build modules

Primary source Explainer: Power Modules: Comparing Tier 1 Supplier Competitiveness Explainer: SiC Modules vs. Discrete Components: Selection Criteria

China

BYD Semiconductor

SiC wafer migration (6→8 inch): Expanding in-house SiC production; vertically integrated
EV exposure: High (in-house EVs at the core)
Recent moves (capacity / impairment / product): Expanding SiC production on China's EV demand
Key supply agreements / partnerships: In-house supply for BYD vehicles

Primary source Explainer: BYD Expands 1200V SiC Output for In-House EV Inverters Explainer: Chinese SiC Manufacturers: Selection Criteria

CRRC Times Electric

SiC wafer migration (6→8 inch): Localizing SiC/IGBT for rail and industrial
EV exposure: Medium (rail/industrial/auto)
Recent moves (capacity / impairment / product): Capacity expansion on localization policy
Key supply agreements / partnerships: Domestic supply chain centric

Primary source Explainer: China IGBT Market: Self-Sufficiency Reshapes Supply Explainer: China IGBT Market: Is 30% Cheaper Worth It on TCO?

Silan Microelectronics

SiC wafer migration (6→8 inch): Expanding domestic IGBT/SiC capacity
EV exposure: Medium (auto/industrial/consumer)
Recent moves (capacity / impairment / product): Gaining share via Chinese price competitiveness
Key supply agreements / partnerships: Primarily domestic

Primary source Explainer: China IGBT Market: Self-Sufficiency Reshapes Supply Explainer: Power Semiconductor Market Restructuring Map 2026

Methodology & Citation

This tracker covers major power-semiconductor suppliers across SiC, GaN, and Si IGBT, organizing SiC wafer scaling (6→8 inch / 200mm), recent capacity/impairment/product moves, key supply agreements, and EV exposure, based on each company's official announcements and IR. EV exposure is a qualitative assessment from public information. A quantitative "supply-risk index" will be added once its methodology is fixed. We update around earnings and major announcements (as of 2026-06-07).

Suggested citation:

Sector Signals「Power Semiconductor Supply & Capacity Tracker」(as of 2026-06-07) https://sector-signals.net/en/trackers/power-semiconductor-supply

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