Founded in 1969 as Ruttonsha International Rectifier Ltd., RIR Power Electronics has led India's power semiconductor market for more than 55 years. On September 19, 2025, the company rebranded, relaunching as India's first vertically integrated SiC semiconductor maker. The veteran firm, listed on the Bombay Stock Exchange (BSE) since 1986, has made the shift to next-generation power devices an explicit strategy. Non-executive Chairman Dr. Harshad Mehta said, "Since taking over 20 years ago, we have aimed to build a globally competitive Indian semiconductor company."
INR 6.18B in Odisha, vertically integrated from epitaxy to mass production
Backed by the Odisha state government, RIR plans to invest a total of INR 6.18 billion in its SiC power campus, completing everything from epitaxy to device manufacturing on a single campus. The SiC cleanroom facility is already built, and wafer epitaxy production is set to begin in March 2026, with a phased move to commercial mass production afterward. The plant will manufacture SiC MOSFETs, IGBTs, and diodes in the 3.3kV-20kV range — an ultra-high-voltage tier above the typical EV range (650V-1.7kV) — targeting EVs, renewable energy, defense electronics, industrial automation, and high-voltage power applications. The new facility is expected to create more than 500 jobs across R&D, engineering, and manufacturing.
NSE listing and a first international order
RIR Power Electronics listed on the National Stock Exchange of India (NSE) on July 30, 2026. The dual listing, alongside its BSE listing since 1986, is aimed at expanding institutional investor participation and improving market liquidity. Proceeds will go toward the SiC manufacturing facility investment in Odisha. Around the same time, the company secured its first international order for high-power semiconductor devices (amount and customer undisclosed), which it frames as part of its SiC-driven expansion.
RIR Power Electronics' turning point
01
Vertically integrated model
From epitaxy to device manufacturing on a single campus. India's first vertically integrated SiC maker.
02
Ultra-high-voltage range
SiC MOSFETs/IGBTs/diodes from 3.3kV to 20kV, targeting defense, aerospace, and industrial uses above the typical EV tier.
03
Dual listing in capital markets
BSE-listed since 1986, now also NSE-listed as of July 2026, broadening funding options for SiC investment.
Aligned with India's Make in India semiconductor self-reliance policy, this move adds a new domestic candidate to the SiC supplier map. Progress from epitaxy production (starting March 2026) to FY2027 mass production will be the real test of its credibility as a diversified sourcing option.
