目录
01 55年老牌企业转型SiC专业厂商 02 奥里萨邦投资618克若尔卢比，从外延到量产垂直整合 03 NSE上市与首笔国际订单 04 参考事实卡 55年老牌企业转型SiC专业厂商 RIR Power Electronics于1969年以Ruttonsha International Rectifier Ltd.之名创立，55年多来一直引领印度电力半导体市场。2025年9月19日，公司完成品牌重塑，以印度首家垂直整合型SiC 半导体制造商的身份重新出发。这家自1986年起在孟买证券交易所（BSE）上市的老牌企业，将向新一代功率器件企业转型作为明确战略。非执行董事长Harshad Mehta博士表示："自20年前接手以来，我们的目标就是打造一家具有全球竞争力的印度半导体企业。"
Key Point
RIR Power Electronics正在奥里萨邦布巴内什瓦尔建设SiC电源园区，总投资618克若尔卢比（约合90亿日元）。晶圆外延生产计划于2026年3月启动，洁净室设施已建设完成，量产目标为FY2027。公司已于2026年7月30日在NSE（印度国家证券交易所）挂牌上市。
奥里萨邦投资618克若尔卢比，从外延到量产垂直整合 在奥里萨邦政府支持下，RIR计划向SiC电源园区投入总计618克若尔卢比，在同一园区内完成从外延生产到器件制造的全流程。SiC洁净室设施已建设完成，晶圆外延生产计划于2026年3月启动，此后逐步过渡至商业化量产。制造对象为SiC MOSFET、IGBT 及二极管，电压范围为3.3kV至20kV——高于通常电动汽车用途（650V至1.7kV）的超高耐压等级，面向电动汽车、可再生能源、国防电子、工业自动化及高压电力应用。新工厂预计在研发、工程与制造部门创造500人以上的就业岗位。
NSE上市与首笔国际订单 RIR Power Electronics于2026年7月30日在印度国家证券交易所（NSE）挂牌上市。在1986年以来的BSE上市基础上实现双重上市，旨在扩大机构投资者参与并提升市场流动性。募集资金将用于奥里萨邦SiC制造设施的投资。同期，公司还获得了首笔高功率半导体器件的国际订单（金额与客户尚未披露），并将其定位为SiC计划带动业务扩张的一部分。
RIR Power Electronics的转折点 01
垂直整合模式 从外延生产到器件制造在单一园区内完成。印度首家SiC垂直整合制造商。
02
超高耐压范围 3.3kV至20kV的SiC MOSFET/IGBT/二极管，瞄准高于电动汽车级别的国防、航空航天及工业用途。
03
资本市场双重上市 1986年BSE上市，2026年7月再增NSE上市，拓宽SiC投资的融资渠道。
这一动向与印度半导体自主政策（Make in India）相呼应，意味着SiC供应商版图新增了一个本土候选企业。从外延生产启动（2026年3月）到FY2027量产目标的推进进度，将是衡量其作为供应链多元化选项可信度的实质指标。
参考事实卡
RIR Power Electronics relaunches as India's first vertically integrated SiC semiconductor maker
RIR Power Electronics (formerly Ruttonsha International Rectifier Ltd.), founded in 1969, rebranded on September 19, 2025, relaunching as India's first vertically integrated SiC semiconductor maker. Headquartered in Bhubaneswar, Odisha, it is building new facilities as part of its SiC power campus.
RIR Power Electronics building a SiC power campus in Bhubaneswar with INR 6.18B total investment
Backed by the Odisha state government, RIR Power Electronics is investing a total of INR 6.18 billion (about JPY 9 billion) in its SiC power campus. State government policy support underpins the project, laying a foundation for India's SiC semiconductor ecosystem.
SiC MOSFETs, IGBTs, and diodes planned in an ultra-high-voltage 3.3kV-20kV range
The Bhubaneswar plant plans to manufacture SiC MOSFETs, IGBTs, and diodes across a wide voltage range of 3.3kV to 20kV. This ultra-high-voltage device class targets renewable energy, defense, aerospace, medical, and industrial applications — a tier above the typical EV range (650V-1.7kV).
SiC wafer epitaxy production set to begin March 2026
RIR Power Electronics announced that SiC wafer epitaxy production at its Bhubaneswar plant will begin in March 2026, with a phased move to commercial mass production afterward. It adopts a vertically integrated model completing everything from epitaxy to device manufacturing on a single campus.
New plant expected to create more than 500 jobs across R&D, engineering, and manufacturing
RIR Power Electronics' Bhubaneswar plant is expected to create more than 500 skilled jobs spanning R&D, engineering, and operations, aiming to establish a first-mover advantage in talent development for India's SiC semiconductor ecosystem.
RIR Power Electronics has a 55-plus-year track record in power semiconductors since its 1969 founding
The company was founded in 1969 as Ruttonsha International Rectifier Ltd. and has led India's power semiconductor market for more than 55 years. Its rebrand marks a full-scale entry into SiC, aiming to establish international competitiveness in next-generation power devices.
RIR Power Electronics newly lists on the NSE, accelerating India's SiC manufacturing investment
RIR Power Electronics listed on the National Stock Exchange of India (NSE) on July 30, 2026. Already listed on the BSE since 1986, this dual listing aims to broaden institutional investor participation and improve market liquidity. Proceeds raised will go toward its SiC manufacturing facility investment in Odisha.
RIR's SiC cleanroom facility construction complete, targeting FY2027 mass production
RIR Power Electronics has completed construction of its SiC manufacturing cleanroom facility in Odisha. Its mass-production target is FY2027. The facility targets SiC devices for EVs, renewable energy, defense electronics, industrial automation, and high-voltage power applications.
RIR Power Electronics secures its first international order for high-power semiconductor devices
RIR Power Electronics secured its first international order for high-power semiconductor devices. Detailed order value, customer name, and delivery timeline are undisclosed, but it is described as a significant commercial milestone marking entry into the global high-power market, positioned as part of expansion tied to its SiC program.
RIR, a legacy manufacturer listed on the BSE since 1986, drives its shift to pure-play SiC
RIR Power Electronics is a power electronics manufacturer listed on India's Bombay Stock Exchange (BSE) since 1986. With roughly 40 years of history, the company has made its transition to a next-generation semiconductor firm an explicit strategy, concentrating resources on SiC manufacturing. Non-executive Chairman Dr. Harshad Mehta said, "Since taking over 20 years ago, we have aimed to build a globally competitive Indian semiconductor company."
SiC adoption expanding across EVs, renewable energy, defense, and industrial automation
RIR names five key application areas for its SiC devices: electric vehicles (EVs), renewable energy systems, defense electronics, industrial automation, and high-voltage power applications. Domestic SiC sourcing needs in India across these areas align with the government's semiconductor self-reliance policy (Make in India).
