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Sector Signals

Research Notes

Sector analysis of market structure, technology shifts, and corporate strategy — grounded in verified facts.

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4 results — category: Feature — tag: GaN Clear filter

Feature

Power Devices: Technology Outlook Beyond SiC and GaN

As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.

Power SemiconductorsGaNSiC

Feature

Power Semiconductor Market Restructuring Map 2026

While the SiC power semiconductor market is projected to reach approximately $3 billion in 2025 and exceed $10 billion by 2030 according to multiple research firms, the current industry focus has shifted from "growth" to "realignment," with the question now being less about who will capture the market and more about who will survive.

Power SemiconductorsGaNSiC

Feature

Power Semi Majors: Investment Strategies for SiC, GaN, IGBT

As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.

Power SemiconductorsGaNIGBT

Feature

SiC and GaN Business Opportunities: Evaluation Criteria

SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.

Power SemiconductorsGaNSiC