Power Semiconductors
BYD Semiconductor
A representative Chinese SiC supplier. Production expansion, captive demand, and pricing pressure from Chinese suppliers are key themes.
Articles
Articles about this company
BYD Expands 1200V SiC Output for In-House EV Inverters
BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.
Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT
An overview of power electronics for water electrolysis systems in green hydrogen production. Explains the adoption of MW-class SiC, grid code compliance, onsemi/Infineon PFC/DC-DC solutions, and insights on CAPEX/OPEX.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.
Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs
ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.
SiC Modules: Practical Thermal Design and TIM Selection
A practical overview of key thermal design considerations for SiC power modules. Covers TIM thermal resistance dominance, real-world liquid cooling flow rate examples, a comparison of top-side cooling and double-sided heat dissipation packages, and power cycle test standards — written for design and procurement engineers.
IGBT to SiC MOSFET: Evaluating TCO and Miniaturization
The key criterion for deciding to switch from IGBT to SiC is not a device-level cost comparison, but rather how SiC-enabled downsizing of cooling systems and passive components changes the overall system BOM cost and product specifications. This article organizes application-specific decision frameworks and hybrid SiC as an intermediate solution.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.