Adoption of ROHM's 750 V SiC MOSFET "SCT4013DLL" is gaining traction for battery backup units (BBUs) used in AI data center uninterruptible power applications. ROHM began mass production of the TOLL-package series in September 2025, positioning it for the ±400 V HVDC bus architecture that is becoming the industry standard.
±400 V HVDC Bus and SiC Demand for BBUs
The ±400 V HVDC (high-voltage direct current) bus is now prevalent in AI power systems, and BBU configurations that connect batteries directly to the DC bus are becoming the mainstream approach. This architecture eliminates the need for a boost converter, but requires switching devices rated for 600–800 V. SiC MOSFETs, which offer superior high-frequency switching and lower conduction losses compared with conventional IGBTs, are well suited to this role and are valued for their thermal reliability in AI power systems that operate continuously around the clock.
SCT4013DLL Specifications and the Advantages of the TOLL Package
The SCT4013DLL is rated at 750 V and 120 A, with a typical on-resistance (Ron) of 13 mΩ and a maximum junction temperature of 175 °C. The TOLL package reduces board footprint by approximately 26% compared with TO-263, supporting high-density mounting on power boards. The lineup spans six variants covering 13–65 mΩ Ron and 26–120 A, addressing not only AI servers but also industrial UPS, solar inverters, and a wide range of other applications.
Key Points for Design Engineers
Compared with 650 V-class devices, the 750 V rating provides greater voltage margin, but the Rds(on) × Qgd trade-off warrants careful attention. ROHM offers an evaluation board (150 A, double-pulse test capable, up to 500 kHz) that enables early switching characterization under actual implementation conditions.