Power Semiconductors
ROHM
A Japanese supplier focused on SiC. Fifth-generation SiC MOSFETs, investment burden, the Denso partnership, and consolidation talks are key themes.
Articles
Articles about this company
Rohm's SiC Business: A Look at the 158.4 Billion Yen Loss - Excess Inventory, Denso Partnership, and Merger Talks with Toshiba Mitsubishi-Electric
ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.
Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET
As the next generation of SiC MOSFETs emerges, many companies are asking, "We want to evaluate the 5th generation, but where do we start?" Considering Rohm's announced 4th generation features of low on-resistance (RonA) and high short-circuit withstand capability, evaluation of the 5th generation must go beyond device specifications alone, encompassing compatibility with protection circuits and thermal design considerations.
SiC Alternative Supplier Comparison — A Practical Guide to Reducing Wolfspeed Dependency
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
SiC Wafer Geopolitics: What Doosan's Acquisition of SK Siltron Signals
South Korea's Doosan announces a full 100% stake acquisition of SK Siltron in a deal valued at approximately 5 trillion KRW. We examine the vertical integration strategy moving forward despite a 414 billion KRW impairment in the SiC business and 1.2 trillion KRW in covenant issues, and place it in the context of Japan-Korea supply chain cooperation.
European OEM SiC Procurement Strategies — Reading the Impact on Japanese Tier 1 Suppliers
Major European OEMs including VW, BMW, and Stellantis are redesigning their SiC procurement strategies. Amid a mix of three approaches — vertical integration, long-term contracts, and diversified sourcing — this article examines the implications for Japanese Tier 1 suppliers and the directions they should consider.
SiC Demand at an Inflection Point — How EV Slowdown Has Opened Industrial Market Opportunities
Slower EV demand growth has prompted a downward revision of SiC market forecasts. Meanwhile, demand from industrial equipment, solar, and data centers is expanding faster than expected, and demand diversification is taking hold as a structural shift. We examine the implications for evaluating supplier demand portfolios.
SiC Module Packaging Technology Trends — How Next-Generation Packages Are Redefining Thermal Design
Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.
Wide Bandgap Semiconductor Manufacturing Cost Trends — Reading the SiC and GaN Cost Curves
The shift to 8-inch SiC wafers and improvements in GaN-on-Si epitaxial growth are reshaping the cost structure of wide bandgap semiconductors. We examine the outlook for when the price gap versus silicon will narrow, and the key manufacturing technology factors driving cost reduction.
BYD Semiconductor Expands SiC Mass Production
In 2024, BYD's semiconductor subsidiary, BYD Semiconductor, announced plans to expand its 1200V SiC MOSFET mass production line, thereby increasing the in-house utilization rate for EV inverters. This move signifies more than just vertical integration; it demonstrates the world's largest EV manufacturer's strategic intent to gain control over the upstream of power semiconductor components.