Power Semiconductors
ROHM
A Japanese supplier focused on SiC. Fifth-generation SiC MOSFETs, investment burden, the Denso partnership, and consolidation talks are key themes.
Articles
Articles about this company
Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs
ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.
Rohm: ¥158.4B SiC Impairment Loss and Industry Reform
ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.
Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET
As the next generation of SiC MOSFETs emerges, many companies are asking, "We want to evaluate the 5th generation, but where do we start?" Considering Rohm's announced 4th generation features of low on-resistance (RonA) and high short-circuit withstand capability, evaluation of the 5th generation must go beyond device specifications alone, encompassing compatibility with protection circuits and thermal design considerations.
SiC Suppliers: Alternative Sources to Reduce Wolfspeed Use
Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.
Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT
An overview of power electronics for water electrolysis systems in green hydrogen production. Explains the adoption of MW-class SiC, grid code compliance, onsemi/Infineon PFC/DC-DC solutions, and insights on CAPEX/OPEX.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.
SiC Modules: Practical Thermal Design and TIM Selection
A practical overview of key thermal design considerations for SiC power modules. Covers TIM thermal resistance dominance, real-world liquid cooling flow rate examples, a comparison of top-side cooling and double-sided heat dissipation packages, and power cycle test standards — written for design and procurement engineers.