Power Semiconductors
STMicroelectronics
A European supplier with automotive adoption records in SiC devices and modules. New fabs and supply to Ampere are key themes.
Articles
Articles about this company
STMicroelectronics Ampere SiC Power Modules for EV 2026
STMicroelectronics and Ampere (a distinct EV powertrain design company, not the Arm-based server design firm formerly part of Oracle) are reportedly collaborating on SiC power modules for next-generation EV traction inverters, targeting commercialization in 2026; the announcement's core is simple, yet it implies a significant strategic shift.
STMicroelectronics SiC New Fab: Mass Production Progress
STMicroelectronics aims to capture EV and industrial demand by incrementally expanding its SiC power semiconductor fab in Catania, Italy, a move that, considering the scale and timing of investment and the pressure to monetize its SiC business, signals more than just a capacity increase.
Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
European OEM SiC Procurement Strategies — Reading the Impact on Japanese Tier 1 Suppliers
Major European OEMs including VW, BMW, and Stellantis are redesigning their SiC procurement strategies. Amid a mix of three approaches — vertical integration, long-term contracts, and diversified sourcing — this article examines the implications for Japanese Tier 1 suppliers and the directions they should consider.
SiC Demand at an Inflection Point — How EV Slowdown Has Opened Industrial Market Opportunities
Slower EV demand growth has prompted a downward revision of SiC market forecasts. Meanwhile, demand from industrial equipment, solar, and data centers is expanding faster than expected, and demand diversification is taking hold as a structural shift. We examine the implications for evaluating supplier demand portfolios.
Wide Bandgap Semiconductor Manufacturing Cost Trends — Reading the SiC and GaN Cost Curves
The shift to 8-inch SiC wafers and improvements in GaN-on-Si epitaxial growth are reshaping the cost structure of wide bandgap semiconductors. We examine the outlook for when the price gap versus silicon will narrow, and the key manufacturing technology factors driving cost reduction.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Key Points in SiC Reliability Evaluation for Industrial Inverters
When considering SiC MOSFET adoption in industrial inverter design, the focus often falls on loss and switching speed. However, a more understated and fundamental question that frequently becomes a practical concern in the field is the device's survivability during load short circuits, as the nature of applications differs between EVs and industrial equipment, where inverters are operational.
Mitsubishi Electric and Coherent Joint Development of 8-inch SiC Substrates
Mitsubishi Electric and Coherent, a leading player in optical components and semiconductor materials, have agreed to jointly develop 8-inch (200mm) SiC wafers, marking a pivotal shift from the current 6-inch (150mm) standard that will fundamentally alter manufacturing cost structures by increasing chip yield per wafer.
Comparing Investment Strategies for SiC, GaN, and IGBT by Major Semiconductor Manufacturers
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.