GaN reaches 2200V — an industry first
Power Integrations announced on August 5, 2026 an industry-first 2200V-rated PowiGaN technology, stating it "significantly exceeds the voltage capability of all existing GaN technology." GaN power devices have long been considered inferior to silicon carbide (SiC) at high voltage, but 2200V pushes into territory that has been SiC's traditional strength.
From data center 1500V distribution to EV auxiliary power
The 2200V PowiGaN technology targets a broad range of high-voltage applications: AI data center 1500V distribution architectures, EV auxiliary power systems, solar inverters, HVDC (high-voltage direct current) infrastructure, and battery energy storage systems. AI data center power architectures are already shifting from 48V toward 400V/800V, and GaN now becomes an option in the higher-tier 1500V distribution space as well.
Power Integrations' leadership emphasized the technology's ability to achieve high switching frequencies, which supports maximizing power density. GaN's move into voltage territory traditionally held by SiC opens the door to simpler system architectures and higher efficiency.
Industry-first 2200V
Significantly exceeds the voltage capability of existing GaN technology.
Broad application range
AI data center 1500V distribution, EV auxiliary power, solar inverters, HVDC, battery ESS.
Moving into SiC territory
GaN becomes an alternative for high-voltage applications long dominated by SiC.
Market outlook
Yole Group forecasts the power GaN device market at $3.5 billion by 2031.
High-voltage device selection has long defaulted to SiC; GaN now enters as an alternative. Which technology wins on the switching frequency, power density, and cost trade-off will be the focus of adoption decisions going forward.