Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
IGBT vs SiC MOSFET: How They Differ and Which to Choose
How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.
ASE: Automated 310mm Square PLP Line Developed
ASE announced on May 26, 2026 that it has developed an industry-first automated 310mm square panel-level packaging (PLP) line. The usable area reaches up to 96,100mm², with 2/2µm line/space for FOCoS and 8/8µm for FOCoS-Bridge. Production is planned for the first half of 2027.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.
SiC Market 2026: Demand Shift to Industrial as EV Slows
SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Power Semi Majors: Investment Strategies for SiC, GaN, IGBT
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.