Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
Navitas Ships First US-Made Gen 5 GaNFast
Navitas ships Gen-5 GaNFast from GlobalFoundries' Vermont fab in September 2026 on a 200mm GaN-on-Si line, ten months after their 2025 partnership.
Innoscience: All-GaN 140W and 1kW AC-DC Designs
Innoscience launched All-GaN AC-DC reference designs on June 29, 2026: 140W at 96.21% and 31.86W/in3, and 1kW at 97.1% and 60.6W/in3.
Power Integrations Hits Industry-First 2200V GaN
Power Integrations announced the first 2200V-rated PowiGaN on August 5, 2026, for 1500V data-center distribution, EV auxiliaries and solar inverters.
GaN patent war: Infineon ITC win and Wolfspeed suit
Infineon won a final US ITC ban on Innoscience GaN imports and Wolfspeed sued Navitas: GaN patent fights have become a procurement risk.
SiC/GaN 2026: China OEM demand
onsemi supplies EliteSiC for NIO's 900V platform and Geely's SEP system and partners with Innoscience on GaN, while Toshiba and ROHM add drivers and packages.
EV Charging Semis: OBC and DC Fast Charging
SiC/GaN adoption is accelerating for OBCs and DC fast charging. Covers 30% loss cuts, 50% density gains, 800V migration, V2X, and ASIL-D safety.
TDK: micro POL 'FS3303' Enters Mass Production
TDK began volume production of the FS3303 micro POL module on May 19, 2026: 2.5x2.5mm, 1.2mm high, 3A output and about 95% peak efficiency.
AIXTRON: FY2026 Guidance Raised on 30% Order Growth
AIXTRON Q1 2026: order intake of about EUR 171M (+30% YoY) on data-center optics demand, with FY2026 revenue guidance raised to about EUR 560M.
Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM
Toshiba began sampling the 1200V trench-gate SiC MOSFET TW007D120E on May 20, 2026, improving Rds(on) x Qgd by about 52% over current products.
Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%
Mitsubishi Electric began sampling 8th-generation NX 1200V IGBT modules in May 2026, cutting power loss by up to 19%, for inverters, UPS and solar.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Why Infineon raised full-year guidance at its FY2026 Q2 results, and what an upward revision signals to the rest of the supply chain.
Power Devices: Technology Outlook Beyond SiC and GaN
After SiC and GaN: gallium oxide, GaN-on-GaN and diamond compared on maturity, production timing, and what designers and buyers should do now.
India Semis: Tata-ASML Partnership and First Fab Launch
Tata Electronics and ASML signed an MOU in May 2026, moving India's first advanced fab, the $11 billion Dholera project, from vision to execution.
Cyient Announces India's First GaN Power ICs
Cyient unveiled 650V GaN power ICs for AI, telecom, fast charging and e-mobility, aimed at higher conversion efficiency in next-generation designs.
GaN Market: Navitas Earnings and India Mass Production
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
GaN-on-Si: The Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon below 650V, moving from EV on-board chargers into industrial motor control, telecom power and UPS. Adoption by application.
Solar Inverter Power Devices: Si IGBT vs SiC vs GaN
How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.
Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)
8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.
AI Server Power Supplies: GaN Adoption Criteria
Choosing GaN for AI server power supplies: where it beats SiC and Si on switching frequency, power density and thermal design, and where it does not.
SiC vs. GaN for EV Applications: Choosing the Right Material
800V EV platforms such as Taycan, IONIQ 6 and EV6 change device selection. Where SiC and GaN each fit across traction, on-board charging and auxiliaries.
GaN Power Semis: Miniaturization and Efficiency Benefits
Silicon MOSFETs stall at tens of kHz while GaN switches into the MHz range, shrinking inductors and capacitors. What that changes in converter design.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
SiC is scaling toward the 2030s and GaN is spreading into data-center power. So where does silicon IGBT still win, and for how long?
Power Semiconductor Market Restructuring Map 2026
SiC is forecast to pass $10 billion by 2030, yet the conversation has moved from growth to realignment: less who wins the market, more who survives.
Renesas Acquires Transphorm GaN Business
Renesas agreed to acquire Transphorm, a pioneer of GaN-on-SiC vertical GaN structures, reshaping its power semiconductor portfolio.
Power Semi Majors: Investment Strategies for SiC, GaN, IGBT
EV inverters, industrial efficiency and data-center density pull at once. Where the majors invest, defend and divest across SiC, GaN and IGBT.
SiC and GaN Business Opportunities: Evaluation Criteria
SiC or GaN is the wrong question alone: they differ in voltage range, switching domain and cost, so the answer depends on application and timing.