Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
Infineon FY2026 Q2 Earnings — AI Data Center Power Semiconductors Drive Growth, Full-Year Guidance Raised
Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.
Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN
As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.
India's Semiconductors Shift into High Gear: The Tata-ASML Partnership Signals a Move from Vision to Execution
In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'
Cyient Announces India's First GaN Power ICs
Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.
GaN Market Moves: Navitas's Strong Earnings and India's First Mass Production Point to the Next Frontier
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
Data Center Power Demand and Power Device Trends — Key Issues for 2026
Power consumption at data centers is surging on the back of generative AI investment. As efficiency requirements tighten, SiC- and GaN-based UPS and PSU designs are becoming mainstream. This article examines the evolving demand for power devices in power infrastructure and the implications for procurement.
GaN-on-Si and the Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.
Power Device Selection Logic for Solar Inverters
Solar power conditioning systems (PCS) use Si IGBT, SiC MOSFET, and GaN-on-Si selectively depending on application type and output scale. We examine the decision criteria for device selection, the positioning of major suppliers, and key procurement considerations.
Wide Bandgap Semiconductor Manufacturing Cost Trends — Reading the SiC and GaN Cost Curves
The shift to 8-inch SiC wafers and improvements in GaN-on-Si epitaxial growth are reshaping the cost structure of wide bandgap semiconductors. We examine the outlook for when the price gap versus silicon will narrow, and the key manufacturing technology factors driving cost reduction.
AI Server Power Supplies: GaN Adoption Criteria
Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.
SiC vs. GaN for EV Applications: Choosing the Right Material
The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si
GaN Power Semiconductors: Benefits of Efficiency and Miniaturization
If you've ever wrestled with improving power conversion efficiency by a single point in inverter design, the numbers alone tell you what GaN (Gallium Nitride) has changed: while silicon MOSFETs hit a wall at tens of kHz switching frequencies, GaN handles up to several MHz, enabling smaller passive components (inductors, capacitors).
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...
Power Semiconductor Market Restructuring Map 2026
While the SiC power semiconductor market is projected to reach approximately $3 billion in 2025 and exceed $10 billion by 2030 according to multiple research firms, the current industry focus has shifted from "growth" to "realignment," with the question now being less about who will capture the market and more about who will survive.
Renesas Acquires Transphorm GaN Business
Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.
Comparing Investment Strategies for SiC, GaN, and IGBT by Major Semiconductor Manufacturers
As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.
SiC and GaN Business Opportunities: Evaluation Criteria
SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.