目录
01 减值之后正在到来的变化 02 谁掌握需求：中国OEM的深度合作 03 SiC之后是GaN：与Innoscience合作 04 技术焦点1：如何削减损耗 05 技术焦点2：散热封装 06 需求扩展：从EV到数据中心 07 对业务的启示与确认点 08 参考FactCard 减值之后正在到来的变化 在SiC 业务接连出现大额减值之后，宽禁带器件（SiC和GaN ）将走向哪里？如果只看财报数字，市场容易显得停滞，但需求的承担者和技术焦点反而正在移动。现在谁在采购SiC，各家公司又想在哪里拉开差距？本文从各家公司在2026年上半年正式发布的动向出发进行整理。
Key Point
SiC需求的最前线在中国OEM。onsemi向NIO从400V到900V的平台迁移供应EliteSiC，并将技术整合进Geely的SEP系统。下一步GaN方面，onsemi与Innoscience合作。技术焦点正转向降低损耗和散热，Toshiba推出新型栅极驱动，ROHM则投放顶部冷却封装TSC3PAK。
谁掌握需求：中国OEM的深度合作 当前推动SiC采用的是中国车企。onsemi 扩大了与NIO的战略合作，并向900V EV平台供应EliteSiC技术。NIO正在将车辆平台从400V迁移到900V，onsemi的SiC支撑这一转变。双方关系不是一次性订单，而是深入到系统层级的多年合作。在2026年北京车展上，NIO展示了多款搭载onsemi技术的车型，其中包括支持900V的车辆。供应的EliteSiC enhanced M3e技术通过改善体二极管特性来降低导通损耗（Eon）。
中国OEM的扩展并不止于NIO。onsemi于2026年4月28日扩大了与Geely Auto Group的战略合作。onsemi的EliteSiC技术将被整合到Geely基于SEA-S架构的SEP（Super Electric Power）系统中。SEA-S是可持续车辆架构的超级混合动力衍生方案，通过支持900V来瞄准快速充电和续航提升。SiC采用的最前线正在中国EV平台中移动。
SiC之后是GaN：与Innoscience合作 各家公司也把视线投向SiC之后的GaN。onsemi于2025年12月2日与Innoscience签署了关于GaN功率器件的非约束性合作MOU。合作包括晶圆采购，将Innoscience在200mm GaN-on-Silicon晶圆量产上的经验与onsemi的封装、驱动和系统集成技术结合起来。目标是扩展低压和中压GaN产品组合，并扩大全球制造规模。市场基础也很广，GaN功率器件2030年TAM预计约为29亿美元。如何把GaN叠加到SiC建立的客户基础之上，将成为下一条竞争轴。
技术焦点1：如何削减损耗 当需求进入恢复阶段，竞争轴会从“能不能做出来”转向“能以多高效率运行”。SiC相较于硅器件，兼具高速开关和低损耗，但高频噪声的权衡是课题。Toshiba正在处理这一点。Toshiba开发了面向SiC器件、具备自动驱动波形生成功能的“反馈型主动栅极驱动技术”，并称其为全球首创。同时还开发了用少量电容生成多级栅极电压的“二进制加权开关电容型低损耗栅极驱动技术”，同样称为全球首创。这些技术面向EV逆变器和数据中心UPS两类用途，并在2026年IEEE ISSCC上发表。不只是器件本身，驱动器件的栅极驱动代际更新也正成为效率竞争的焦点。
技术焦点2：散热封装 功率密度越高，“如何把热带走”就越像性能本身一样重要。ROHM 于2026年6月开始量产面向SiC MOSFET的顶部冷却封装TSC3PAK。该结构从器件上表面散热，外形尺寸为14.00 x 18.58 x 3.50mm。它确保6.66mm爬电距离，并支持AC峰值1200V。产品线由6款750V产品和6款1200V产品构成，目标应用从车载OBC和电动压缩机，到PV逆变器和服务器电源，范围很广。封装技术正在成为发挥SiC实力的限制因素。
需求扩展：从EV到数据中心 SiC的去向并不只有EV。最能说明这一点的，是Toshiba于2026年5月20日开始送样的1200V沟槽栅SiC MOSFET“TW007D120E”。其主要用途为下一代AI数据中心的电源系统，导通电阻7.0mΩ（typ）、漏极电流172A，相比第三代把RDS(on)A降低约58%、把品质因数（FOM）改善约52%。封装为支持顶部冷却的QDPAK。再加上Toshiba的栅极驱动技术包含数据中心UPS用途、ROHM的TSC3PAK把服务器电源列为目标应用，随着电源系统追求更高效率和更高功率密度，数据中心正在成为新的需求支柱。外界常谈EV放缓，但应用的边界其实正在扩大。
宽禁带2026的论点 01
需求由中国OEM主导 onsemi向NIO的400V到900V迁移供应EliteSiC，并整合进Geely的SEP系统。SiC采用的最前线在中国EV中移动。
02
下一条轴是GaN onsemi与Innoscience签署GaN合作MOU，结合Innoscience的200mm GaN-on-Si量产能力，瞄准2030年TAM 29亿美元的市场。
03
降低损耗的竞争 Toshiba开发全球首创的反馈型主动栅极驱动等技术，应对SiC高速、低损耗与高频噪声的权衡，并在ISSCC 2026发表。
04
散热与用途扩展 ROHM开始量产顶部冷却TSC3PAK（6.66mm爬电/支持1200V）。应用从OBC扩大到服务器电源，需求从EV扩展到DC。
对业务的启示与确认点 如果只用减值周期的数字判断SiC是“结束的市场”，就会看漏需求承担者和技术焦点正在移动。从采购和设计角度，需要确认的是：采用方OEM在哪个地区、向哪个电压平台（400V/900V）移动；供应商是否在SiC之后布局GaN；栅极驱动和散热封装等周边技术代际是否符合自身要求；以及EV以外，需求是否正在向数据中心等方向扩展。市场不是单纯缩小，而是在更换承担者和应用场景的同时进入下一阶段。
参考FactCard
onsemi and NIO expand strategic collaboration to supply EliteSiC technology for 900V EV platforms
On April 27, 2026, onsemi (Nasdaq: ON) announced an expanded strategic collaboration with NIO Inc. (NYSE: NIO). Building on the companies multi-year partnership, the agreement accelerates NIOs transition from 400V to 900V architecture. NIO will use onsemis EliteSiC enhanced M3e technology to improve efficiency, performance, and scalability.
NIO shifts EV platforms from 400V to 900V, with onsemi SiC supporting the transition
NIO is moving from conventional 400V architecture to next-generation 900V architecture, and onsemi is supporting the shift with SiC power semiconductors. The 400V-to-900V transition is intended to improve charging speed, driving range, and system efficiency. NIO plans to accelerate the shift based on its multi-year collaboration with onsemi.
EliteSiC enhanced M3e reduces turn-on loss, Eon, through improved body-diode characteristics
onsemis EliteSiC enhanced M3e technology delivers optimized switching performance through improved body-diode characteristics. It reduces turn-on loss, Eon, while maintaining short-circuit ruggedness. The result is higher system output, improved thermal performance, longer driving range, and faster charging.
onsemi and Geely Auto Group expand strategic collaboration to accelerate next-generation EV development on April 28, 2026
onsemi (NASDAQ: ON) and Geely Auto Group announced on April 28, 2026 that they had expanded their strategic collaboration to accelerate development of next-generation electric and hybrid vehicles. The collaboration deepens system-level integration of onsemis SiC technology into Geely vehicle platforms, with bases in Scottsdale, Arizona and Hangzhou, China.
onsemi EliteSiC technology is integrated into Geelys SEP system based on the SEA-S architecture
onsemis EliteSiC power technology will be used in vehicles based on Geelys SEA-S architecture, a super-hybrid derivative of Sustainable Experience Architecture. Geely is deploying its Super Electric Power System, SEP, on this platform, and integration with onsemi technology will accelerate system-level design and development.
onsemi and Innoscience sign non-binding MOU for GaN power-device collaboration on December 2, 2025
onsemi announced that it had signed an MOU with Innoscience to explore expanded GaN power-device production using Innosciences proven 200mm GaN-on-Silicon process. The MOU is non-binding and sets a framework for a strategic partnership that includes wafer sourcing and expanded collaboration. The announcement date was December 2, 2025.
Innoscience has mass-production experience in 200mm GaN-on-Silicon wafers
Innoscience has achieved high-volume manufacturing with a 200mm GaN-on-Silicon process, and onsemi plans to use this manufacturing capability to expand low- and mid-voltage GaN power portfolios. Compared with 6-inch, 150mm, wafers, 200mm wafers offer stronger cost competitiveness and directly support lower production cost.
The 2030 TAM for GaN power devices is estimated at about $2.9 billion
The collaboration MOU sets a target market of $2.9 billion for the 2030 total addressable market, TAM, for GaN power devices. The companies see potential combined value on the order of hundreds of millions of dollars.
Toshiba develops what it calls the worlds first feedback active gate-driver technology with automatic drive-waveform generation for SiC devices
On February 17, 2026, Toshiba announced feedback active gate-driver technology that automatically optimizes the trade-off between loss and noise in SiC power semiconductors. Toshiba says the technology is the worlds first to include automatic drive-waveform generation and automatically controls the balance between noise and loss during high-speed SiC switching. It contributes to higher efficiency, smaller size, and improved reliability in EV and data-center power systems.
Toshibas SiC gate-driver technology targets both EV inverters and data-center UPS applications
The main target applications for the developed technology are EV power systems and power systems including data-center UPS. SiC devices switch faster than Si devices and have much lower power loss during ON-OFF transitions, but high-frequency operation creates noise. The technology is presented as a solution to that issue and is also linked to the goal of contributing to a decarbonized society.
SiC combines high-speed switching and low loss compared with Si devices, but faces a high-frequency-noise trade-off
Compared with widely used Si devices, SiC devices offer high-speed switching and sharply lower power loss during ON-OFF transitions. At the same time, SiC has a trade-off in which noise caused by high-speed, high-frequency operation can reduce efficiency. As power semiconductor modules grow in capacity and frequency, increased loss on the driver IC side is also an issue. Toshibas new technology aims to address both problems.
ROHM started mass production of TSC3PAK for SiC MOSFETs in June 2026
ROHM announced on June 9, 2026 a new package, TSC3PAK, for SiC MOSFETs. Mass production started in June 2026, and simulation models for all new products are also provided on ROHMs official website.
TSC3PAK supports AC peak 1200V with 6.66mm creepage distance
TSC3PAK secures 6.66mm creepage distance through ROHMs proprietary groove structure. It is specified to support AC peak voltage of 1200V in Pollution Degree 2 environments. The package supports insulation design for high-voltage applications and is said to help reduce mounting cost and improve reliability.
TSC3PAK external dimensions are 14.00 x 18.58 x 3.50mm
TSC3PAK is a surface-mount package for SiC MOSFETs with external dimensions of 14.00 x 18.58 x 3.50mm. Its top-side heat-dissipation structure places the heat-dissipation surface on the package top. ROHM says it delivers heat-dissipation performance comparable to conventional through-hole packages such as TO-247-4L.
Target applications include automotive OBCs and electric compressors, plus PV inverters and server power supplies
ROHM lists onboard chargers, OBCs, and electric compressors as automotive applications for SiC MOSFETs in TSC3PAK. Industrial applications include PV inverters and server power supplies. ROHM explains that SiC adoption in xEVs is spreading beyond main inverters to other power-conversion circuits.
Toshiba began sample shipments of its 1200V trench-gate SiC MOSFET "TW007D120E" for next-generation AI data center power supplies.
Toshiba started sample shipments of the 1200V trench-gate SiC MOSFET "TW007D120E" on May 20, 2026. Its primary application is power supply systems for next-generation AI data centers, and it also targets PV inverters, UPS, and EV charging. On-resistance is 7.0 mOhm (typ, VGS=15V), drain current 172 A (Tc=25C), in a QDPAK package that supports top-side cooling. Versus the 3rd generation, it reduces RDS(on)A by about 58% and improves the figure of merit by about 52%. Mass production is planned during FY2026. Supported by Japan NEDO project JPNP21029.
