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News

Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%

On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.

Power Semiconductors Wolfspeed SiC MOSFET

News

Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.

Power Semiconductors Toshiba SiC MOSFET

News

Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs

ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.

Power Semiconductors ROHM SiC MOSFET