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News

Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.

Power Semiconductors Toshiba SiC MOSFET

News

Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.

Power Semiconductors Mitsubishi Electric IGBT