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65 results — theme: Power Semiconductors Clear filter

Practical Guide

Practical Guide to Power Semiconductors for Grid Stabilization: STATCOM, HVDC, FACTS

A comprehensive overview of power semiconductors for STATCOM and HVDC systems, which are seeing increased demand due to renewable energy integration. Covers Mitsubishi Electric's ±450MVAr track record, Infineon's 4500V IGBT modules, LCC vs. VSC technology selection, and procurement insights.

Power SemiconductorsSTATCOMHVDC

Practical Guide

Practical Guide to Power Semiconductors for Water Electrolysis: Green Hydrogen and SiC/IGBT

An overview of power electronics for water electrolysis systems in green hydrogen production. Explains the adoption of MW-class SiC, grid code compliance, onsemi/Infineon PFC/DC-DC solutions, and insights on CAPEX/OPEX.

Power SemiconductorsGreen HydrogenWater Electrolysis

Practical Guide

EV Charging Semis: OBC and DC Fast Charging

SiC/GaN adoption is accelerating for OBCs and DC fast charging. Covers 30% loss cuts, 50% density gains, 800V migration, V2X, and ASIL-D safety.

Power SemiconductorsOBCEV charging

News

Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%

On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.

Power SemiconductorsWolfspeedSiC MOSFET

Practical Guide

AQG 324 Automotive Power Module Qualification Practical Guide

Summarizes the test requirements for humidity, power cycling, thermal shock, and vibration defined by ZVEI/ECPE's AQG 324, specific qualification challenges for SiC MOSFETs, and how to address additional OEM requirements.

Power SemiconductorsAQG324Automotive Power Module

Feature

IGBT vs SiC MOSFET: How They Differ and Which to Choose

How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.

Power SemiconductorsIGBTSiC MOSFET

News

India Semiconductor: OSAT and Design Onshore

Tata is building India's first semiconductor assembly and test facility, TSAT, in Jagiroad, Assam, with an investment of Rs 27,000 crore, or more than $3 billion. After ramp-up, it is expected to produce up to 48 million chips per day and support more than 27,000 jobs.

Power SemiconductorsIndia SemiconductorOSAT

News

ASE: Automated 310mm Square PLP Line Developed

ASE announced on May 26, 2026 that it has developed an industry-first automated 310mm square panel-level packaging (PLP) line. The usable area reaches up to 96,100mm², with 2/2µm line/space for FOCoS and 8/8µm for FOCoS-Bridge. Production is planned for the first half of 2027.

Power SemiconductorsASEPanel-Level Packaging

News

Entegris/Inpria: EUV MOR Resist Cross-License

Entegris and JSR subsidiary Inpria signed a non-exclusive cross-license covering metal oxide resist (MOR) patents for EUV lithography. The agreement covers formulation, precursor synthesis, and ultra-high-purity filtration, and also ends the pending IPR2025-00267 patent review.

Power SemiconductorsEntegrisJSR

News

TDK: micro POL 'FS3303' Enters Mass Production

TDK began mass production of the ultra-compact 'FS3303' micro POL DC-DC module for AI edge devices on May 19, 2026. The 2.5x2.5mm, 1.2mm-high module delivers 3A, reaches about 95% peak efficiency, and supports 2.7-6V input and 0.4-3.3V output rails.

Power SemiconductorsTDKmicro POL

News

Microchip: 3.3kV SiC Module HV-D3 Announced

Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).

Power SemiconductorsMicrochipSiC

News

AIXTRON: FY2026 Guidance Raised on 30% Order Growth

AIXTRON released its Q1 2026 preliminary results, with order intake reaching approximately €171 million (+30% YoY), driven by surging data-center optical communications demand. The company raised its FY2026 full-year revenue guidance from approximately €520 million to approximately €560 million.

Power SemiconductorsAIXTRONMOCVD

News

Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.

Power SemiconductorsToshibaSiC MOSFET

News

Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.

Power SemiconductorsMitsubishi ElectricIGBT

Practical Guide

China IGBT Market: Is 30% Cheaper Worth It on TCO?

Is Chinese IGBT's 30%-lower price real competitiveness or a temporary offensive? We weigh the full TCO — AEC-Q101 cost, redesign hours, and supply risk.

Power SemiconductorsIGBTChinese Semiconductors

News

Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs

ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.

Power SemiconductorsROHMSiC MOSFET

Practical Guide

SiC Modules: Practical Thermal Design and TIM Selection

A practical overview of key thermal design considerations for SiC power modules. Covers TIM thermal resistance dominance, real-world liquid cooling flow rate examples, a comparison of top-side cooling and double-sided heat dissipation packages, and power cycle test standards — written for design and procurement engineers.

Power SemiconductorsSiCThermal Design

Practical Guide

IGBT to SiC MOSFET: Evaluating TCO and Miniaturization

The key criterion for deciding to switch from IGBT to SiC is not a device-level cost comparison, but rather how SiC-enabled downsizing of cooling systems and passive components changes the overall system BOM cost and product specifications. This article organizes application-specific decision frameworks and hybrid SiC as an intermediate solution.

Power SemiconductorsIGBTSiC

News

Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC

Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.

Power SemiconductorsInfineonGaN

Feature

Power Devices: Technology Outlook Beyond SiC and GaN

As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.

Power SemiconductorsGaNSiC

Practical Guide

SiC Suppliers: Alternative Sources to Reduce Wolfspeed Use

Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.

Power SemiconductorsSiCWolfspeed

News

Doosan Acquires SK Siltron: SiC Wafer Supply Shift 2026

Doosan acquires 100% of SK Siltron for ~5 trillion KRW. We assess the SiC wafer vertical-integration play despite a 414bn KRW impairment and covenant risk.

Power SemiconductorsSiCSiC wafer

News

India Semis: Tata-ASML Partnership and First Fab Launch

In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'

Power SemiconductorsIndiasemiconductor fab

News

Cyient Announces India's First GaN Power ICs

Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.

Power SemiconductorsGaNpower IC

News

GaN Market: Navitas Earnings and India Mass Production

Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.

Power SemiconductorsGaNFinancial Results

News

Rohm: ¥158.4B SiC Impairment Loss and Industry Reform

ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.

Power SemiconductorsPower SemiconductorsSiC

Practical Guide

European OEMs: SiC Procurement Shift

VW, BMW, and Stellantis are redesigning SiC procurement. This article maps integration, long-term contracts, diversified sourcing, and Tier 1 impacts.

Power SemiconductorsSiCEuropean OEM

Practical Guide

GaN-on-Si: The Next Decade of Industrial Power Electronics

GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.

Power SemiconductorsGaNPower Semiconductors

Feature

China IGBT Market: Self-Sufficiency Reshapes Supply

Chinese IGBT makers — BYD, Starpower, CRRC Times — are raising self-sufficiency and going global, reshaping competition with EU and Japanese suppliers.

Power SemiconductorsIGBTChinese Semiconductors

Practical Guide

Power Modules: Comparing Tier 1 Supplier Competitiveness

This article benchmarks six leading power module suppliers — Infineon, onsemi, STMicro, Mitsubishi Electric, Fuji Electric, and Rohm — across four dimensions: product lineup, SiC capability, supply capacity, and price competitiveness. The findings are intended as a reference for procurement source selection.

Power SemiconductorsPower ModulesSupplier Comparison

News

SiC Market 2026: Demand Shift to Industrial as EV Slows

SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.

Power SemiconductorsSiCEV

Practical Guide

SiC Modules: Next-Gen Packaging and Thermal Design Trends

Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.

Power SemiconductorsSiCPower Module

Practical Guide

Solar Inverter Power Devices: Si IGBT vs SiC vs GaN

How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.

Power SemiconductorsSolar PowerPower Conditioning System

News

Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)

8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.

Power SemiconductorsSiCGaN

Practical Guide

AI Server Power Supplies: GaN Adoption Criteria

Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.

Power SemiconductorsAI serverGaN

News

BYD Expands 1200V SiC Output for In-House EV Inverters

BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.

Power SemiconductorsBYDEV

Practical Guide

Chinese SiC Manufacturers: Selection Criteria

Many teams are internally divided on whether to adopt Chinese SiC manufacturers, with some voicing concerns about quality and others emphasizing the undeniable cost factor, but responding to this question with a simple "not adopting because it's Chinese" or "adopting because it's cheap" is too simplistic a judgment; what is being asked is how and what to verify.

Power SemiconductorsChinaSiC

Feature

EV Power Semiconductor Application Selection Matrix

The cost of SiC power modules per inverter is 2 to 3 times higher than traditional Si-based modules, yet EV manufacturers are accelerating their transition to SiC because the increased efficiency and reduced size of the overall system offset this higher component cost; however, it is not simply a matter of "using SiC," as EV power conversion systems are divided into multiple applications, each with its own...

Power SemiconductorsEVpower module

Practical Guide

EV SiC Inverters: Loss Calculation and Range Improvement

A 1% increase in conversion efficiency for EV inverters translates to a difference of several kilometers in driving range; when design engineers face the challenge of improving real-world efficiency beyond catalog values, the first question they encounter is "which losses to calculate and how." Without correctly decomposing the loss breakdown, SiC may not yield the expected efficiency improvements.

Power SemiconductorsEVSiC

Practical Guide

SiC vs. GaN for EV Applications: Choosing the Right Material

The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si

Power SemiconductorsEVGaN

News

Fuji Electric Unveils Next-Generation IGBT

As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.

Power SemiconductorsIGBT富士電機

Practical Guide

GaN Power Semis: Miniaturization and Efficiency Benefits

If you've ever wrestled with improving power conversion efficiency by a single point in inverter design, the numbers alone tell you what GaN (Gallium Nitride) has changed: while silicon MOSFETs hit a wall at tens of kHz switching frequencies, GaN handles up to several MHz, enabling smaller passive components (inductors, capacitors).

Power SemiconductorsGaNpower semiconductor

Feature

Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?

The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...

Power SemiconductorsIGBTSiC

Practical Guide

Industrial Inverters: SiC MOSFET Reliability Evaluation

When considering SiC MOSFET adoption in industrial inverter design, the focus often falls on loss and switching speed. However, a more understated and fundamental question that frequently becomes a practical concern in the field is the device's survivability during load short circuits, as the nature of applications differs between EVs and industrial equipment, where inverters are operational.

Power SemiconductorsSiCindustrial

News

Infineon CoolSiC Product Lineup Updates

Infineon's CoolSiC update should be read through voltage coverage, gate structure, short-circuit margin, and driver fit.

Power SemiconductorsInfineonSiC

News

Infineon and SK Siltron Sign SiC Wafer Supply Agreement

In 2025, Infineon signed a multi-year SiC wafer supply agreement with SK Siltron, symbolizing a structural shift in the SiC supply chain where wafer procurement secured through single long-term contracts will determine the competitiveness of power semiconductors.

Power SemiconductorsInfineonSK Siltron

News

Japanese Power Semiconductor Trio's Integration Progress

The "consolidation of three Japanese power semiconductor firms" concept, repeatedly reported since 2025, has garnered attention as a state-backed restructuring initiative supported by Japan's Ministry of Economy, Trade and Industry; however, tracking the movements of the involved companies reveals that the outline of the consolidation remains vague, prompting a need to clarify what has been decided and what remains undecided in the current situation.

Power SemiconductorsJapanmarket restructuring

News

Mitsubishi Electric: 8-inch SiC Substrates with Coherent

Mitsubishi Electric and Coherent, a leading player in optical components and semiconductor materials, have agreed to jointly develop 8-inch (200mm) SiC wafers, marking a pivotal shift from the current 6-inch (150mm) standard that will fundamentally alter manufacturing cost structures by increasing chip yield per wafer.

Power Semiconductors8-inch SiCCoherent

News

onsemi SiC Business Performance Outlook

As 2025 begins, a prevailing view is that onsemi's SiC business is not growing as much as market expectations, with its SiC business, primarily for EV inverters, facing headwinds from the slowing electrification pace in Europe and the US, leading to a series of downward revisions to full-year forecasts. However, the company remains unwavering in its SiC investment strategy, a stance of "standing firm" that...

Power SemiconductorsSiConsemi

Feature

Power Semiconductor Market Restructuring Map 2026

While the SiC power semiconductor market is projected to reach approximately $3 billion in 2025 and exceed $10 billion by 2030 according to multiple research firms, the current industry focus has shifted from "growth" to "realignment," with the question now being less about who will capture the market and more about who will survive.

Power SemiconductorsGaNSiC

Feature

Foundations for Power Semiconductor Supplier Evaluation

A design team preparing for high-volume production of EV inverters faced an initial hurdle in selecting SiC MOSFET suppliers: "We don't know which datasheets to compare." Simply juxtaposing spec sheets proved insufficient as measurement conditions altered the meaning of figures, and reliability data was presented in inconsistent formats across different companies.

Power SemiconductorsSiCproduction

News

Renesas Acquires Transphorm GaN Business

Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.

Power SemiconductorsGaNM&A

News

Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed

Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.

Power SemiconductorsRenesasSiC

Practical Guide

Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET

As the next generation of SiC MOSFETs emerges, many companies are asking, "We want to evaluate the 5th generation, but where do we start?" Considering Rohm's announced 4th generation features of low on-resistance (RonA) and high short-circuit withstand capability, evaluation of the 5th generation must go beyond device specifications alone, encompassing compatibility with protection circuits and thermal design considerations.

Power SemiconductorsROHMSiC

Feature

Power Semi Majors: Investment Strategies for SiC, GaN, IGBT

As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.

Power SemiconductorsGaNIGBT

Practical Guide

SiC 8-inch Wafer Supply System

While SiC power semiconductor wafer sizes are transitioning from 6-inch (150mm) to 8-inch (200mm), a significant gap remains between the commencement of this transition and the establishment of a stable supply chain; when assessing the 8-inch wafer supply chain from a design and procurement perspective, the pace of transition is a critical factor.

Power Semiconductors8-inch SiCSiC

Feature

SiC and GaN Business Opportunities: Evaluation Criteria

SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.

Power SemiconductorsGaNSiC

Practical Guide

Key Considerations for Selecting SiC Gate Drivers

As SiC MOSFET adoption accelerates, gate driver selection increasingly dictates design quality; the key lies in SiC devices' smaller die size and higher current density, leading to significantly faster temperature rises during short circuits compared to silicon (Si) devices, necessitating a different approach to protection circuit design.

Power SemiconductorsSiCgate driver

Practical Guide

SiC Modules vs. Discrete Components: Selection Criteria

Once the decision to use SiC is made in the early stages of inverter design, the next question is whether to opt for modules or discrete components, a choice that, while appearing to be merely an implementation form, fundamentally impacts system performance, board area, protection circuit design, and procurement flexibility.

Power SemiconductorsSiCpower module

Practical Guide

SiC Wafer Price Trends and 2026 Outlook

The SiC power semiconductor market in 2024 saw slower-than-expected demand growth, prompting some manufacturers to revise production plans. This "plateau" situation directly impacts a wide range of decisions, from cost calculations for device design to the reassessment of procurement strategies, raising questions about wafer price movements. To discuss the outlook for 2026, we must first consider

Power SemiconductorsSiCSiC wafer

Practical Guide

Navigating SiC Wafer Procurement Risks

As the adoption of SiC (Silicon Carbide) power semiconductors accelerates, securing a stable supply of wafers is increasingly becoming the biggest bottleneck after design completion, as even the most advanced devices selected during the design phase cannot be mass-produced without available wafers; therefore, to manage supply chain risks, it is crucial to structurally understand "how and where bottlenecks occur in each process.

Power SemiconductorsSiCSiC wafer

News

STMicroelectronics Ampere SiC Power Modules for EV 2026

STMicroelectronics and Ampere are targeting 2026 commercialization of SiC power modules for next-generation EV traction inverters.

Power SemiconductorsAmpereEV

News

STMicroelectronics SiC New Fab: Mass Production Progress

STMicroelectronics aims to capture EV and industrial demand by incrementally expanding its SiC power semiconductor fab in Catania, Italy, a move that, considering the scale and timing of investment and the pressure to monetize its SiC business, signals more than just a capacity increase.

Power SemiconductorsEVSTMicroelectronics

News

Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%

Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.

Power SemiconductorsIGBTToshiba

Practical Guide

Wolfspeed: Changing SiC Procurement Risks Post-Restructure

Wolfspeed emerged from Chapter 11 in September 2025. While the risk of financial insolvency has been resolved, the Mohawk Valley Fab continues to run at utilization rates in the low 20s, shifting the fundamental risk from 'bankruptcy concern' to 'utilization-rate dependency.' Drawing on the strategic equity relationship with Renesas and Q3 FY2026 results, this article reexamines the evaluation criteria for SiC procurement.

Power SemiconductorsSiCWolfspeed