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Infineon FY2026 Q2 Earnings — AI Data Center Power Semiconductors Drive Growth, Full-Year Guidance Raised

Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.

Power Semiconductors Infineon GaN

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Next-Generation Power Device Technology Outlook — Design and Procurement Strategies Beyond SiC and GaN

As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.

Power Semiconductors GaN SiC

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SiC Alternative Supplier Comparison — A Practical Guide to Reducing Wolfspeed Dependency

Wolfspeed's bankruptcy and restructuring has highlighted the risks of single-supplier dependency in SiC procurement. This guide compares Infineon CoolSiC, onsemi EliteSiC, ROHM, Mitsubishi Electric, Fuji Electric, and Chinese manufacturers on key characteristics and selection criteria, providing a framework for building a multi-supplier strategy.

Power Semiconductors SiC Wolfspeed

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SiC Wafer Geopolitics: What Doosan's Acquisition of SK Siltron Signals

South Korea's Doosan announces a full 100% stake acquisition of SK Siltron in a deal valued at approximately 5 trillion KRW. We examine the vertical integration strategy moving forward despite a 414 billion KRW impairment in the SiC business and 1.2 trillion KRW in covenant issues, and place it in the context of Japan-Korea supply chain cooperation.

Power Semiconductors SiC SiC wafer

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India's Semiconductors Shift into High Gear: The Tata-ASML Partnership Signals a Move from Vision to Execution

In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'

Power Semiconductors India semiconductor fab

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Cyient Announces India's First GaN Power ICs

Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.

Power Semiconductors GaN power IC

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GaN Market Moves: Navitas's Strong Earnings and India's First Mass Production Point to the Next Frontier

Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.

Power Semiconductors GaN Financial Results

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Rohm's SiC Business: A Look at the 158.4 Billion Yen Loss - Excess Inventory, Denso Partnership, and Merger Talks with Toshiba Mitsubishi-Electric

ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.

Power Semiconductors Power Semiconductors SiC

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Data Center Power Demand and Power Device Trends — Key Issues for 2026

Power consumption at data centers is surging on the back of generative AI investment. As efficiency requirements tighten, SiC- and GaN-based UPS and PSU designs are becoming mainstream. This article examines the evolving demand for power devices in power infrastructure and the implications for procurement.

Power Semiconductors Data Center Power Semiconductors

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European OEM SiC Procurement Strategies — Reading the Impact on Japanese Tier 1 Suppliers

Major European OEMs including VW, BMW, and Stellantis are redesigning their SiC procurement strategies. Amid a mix of three approaches — vertical integration, long-term contracts, and diversified sourcing — this article examines the implications for Japanese Tier 1 suppliers and the directions they should consider.

Power Semiconductors SiC European OEM

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GaN-on-Si and the Next Decade of Industrial Power Electronics

GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.

Power Semiconductors GaN Power Semiconductors

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The IGBT Market Shifts — How Chinese Manufacturers Are Changing the Procurement Landscape

Chinese IGBT manufacturers such as BYD Semiconductor, Starpower Semiconductor, and CRRC Times are rapidly increasing domestic self-sufficiency and accelerating their entry into global markets. Intensifying price competition and concerns about oversupply are reshaping the competitive landscape against European and Japanese suppliers. This article examines the procurement implications.

Power Semiconductors IGBT Chinese Semiconductors

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Comparing the Competitiveness of Power Module Tier 1 Suppliers

This article benchmarks six leading power module suppliers — Infineon, onsemi, STMicro, Mitsubishi Electric, Fuji Electric, and Rohm — across four dimensions: product lineup, SiC capability, supply capacity, and price competitiveness. The findings are intended as a reference for procurement source selection.

Power Semiconductors Power Modules Supplier Comparison

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SiC Demand at an Inflection Point — How EV Slowdown Has Opened Industrial Market Opportunities

Slower EV demand growth has prompted a downward revision of SiC market forecasts. Meanwhile, demand from industrial equipment, solar, and data centers is expanding faster than expected, and demand diversification is taking hold as a structural shift. We examine the implications for evaluating supplier demand portfolios.

Power Semiconductors SiC EV

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SiC Module Packaging Technology Trends — How Next-Generation Packages Are Redefining Thermal Design

Performance limitations in SiC power modules are often attributable to packaging rather than the devices themselves. The shift from gel encapsulation to epoxy and ceramic encapsulation, and the adoption of double-sided cooling structures, are packaging and assembly technology trends that will determine the competitiveness of next-generation SiC systems.

Power Semiconductors SiC Power Module

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Power Device Selection Logic for Solar Inverters

Solar power conditioning systems (PCS) use Si IGBT, SiC MOSFET, and GaN-on-Si selectively depending on application type and output scale. We examine the decision criteria for device selection, the positioning of major suppliers, and key procurement considerations.

Power Semiconductors Solar Power Power Conditioning System

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Wide Bandgap Semiconductor Manufacturing Cost Trends — Reading the SiC and GaN Cost Curves

The shift to 8-inch SiC wafers and improvements in GaN-on-Si epitaxial growth are reshaping the cost structure of wide bandgap semiconductors. We examine the outlook for when the price gap versus silicon will narrow, and the key manufacturing technology factors driving cost reduction.

Power Semiconductors SiC GaN

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AI Data Center Power: A Comprehensive Overview of Design Trends

Power consumption for a single rack of servers running GPT-4 has surged from an average of 10-15kW in 2020 to over 100kW for racks equipped with the latest AI accelerators, with NVIDIA H100-dense racks approaching 70kW individually, and further increases anticipated with the next-generation Blackwell architecture.

Power Semiconductors AI server data center

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AI Server Power Supplies: GaN Adoption Criteria

Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.

Power Semiconductors AI server GaN

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BYD Semiconductor Expands SiC Mass Production

In 2024, BYD's semiconductor subsidiary, BYD Semiconductor, announced plans to expand its 1200V SiC MOSFET mass production line, thereby increasing the in-house utilization rate for EV inverters. This move signifies more than just vertical integration; it demonstrates the world's largest EV manufacturer's strategic intent to gain control over the upstream of power semiconductor components.

Power Semiconductors BYD EV

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Chinese SiC Manufacturers: Selection Criteria

Many teams are internally divided on whether to adopt Chinese SiC manufacturers, with some voicing concerns about quality and others emphasizing the undeniable cost factor, but responding to this question with a simple "not adopting because it's Chinese" or "adopting because it's cheap" is too simplistic a judgment; what is being asked is how and what to verify.

Power Semiconductors China SiC

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EV Power Semiconductor Application Selection Matrix

The cost of SiC power modules per inverter is 2 to 3 times higher than traditional Si-based modules, yet EV manufacturers are accelerating their transition to SiC because the increased efficiency and reduced size of the overall system offset this higher component cost; however, it is not simply a matter of "using SiC," as EV power conversion systems are divided into multiple applications, each with its own...

Power Semiconductors EV power module

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SiC Inverter for EVs: Loss Calculation and Efficiency Improvement

A 1% increase in conversion efficiency for EV inverters translates to a difference of several kilometers in driving range; when design engineers face the challenge of improving real-world efficiency beyond catalog values, the first question they encounter is "which losses to calculate and how." Without correctly decomposing the loss breakdown, SiC may not yield the expected efficiency improvements.

Power Semiconductors EV SiC

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SiC vs. GaN for EV Applications: Choosing the Right Material

The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si

Power Semiconductors EV GaN

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Fuji Electric Unveils Next-Generation IGBT

As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.

Power Semiconductors IGBT 富士電機

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GaN Power Semiconductors: Benefits of Efficiency and Miniaturization

If you've ever wrestled with improving power conversion efficiency by a single point in inverter design, the numbers alone tell you what GaN (Gallium Nitride) has changed: while silicon MOSFETs hit a wall at tens of kHz switching frequencies, GaN handles up to several MHz, enabling smaller passive components (inductors, capacitors).

Power Semiconductors GaN power semiconductor

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Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?

The long-heralded transition of power in the power conversion market is underway, with the SiC power device global market projected for rapid expansion towards the 2030s, and GaN adoption broadening from home appliances to data center power supplies. This raises the question about Silicon IGBTs...

Power Semiconductors IGBT SiC

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Key Points in SiC Reliability Evaluation for Industrial Inverters

When considering SiC MOSFET adoption in industrial inverter design, the focus often falls on loss and switching speed. However, a more understated and fundamental question that frequently becomes a practical concern in the field is the device's survivability during load short circuits, as the nature of applications differs between EVs and industrial equipment, where inverters are operational.

Power Semiconductors SiC industrial

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Infineon CoolSiC Product Lineup Updates

Infineon, a leader in the SiC MOSFET market, is updating its CoolSiC family lineup, a move not just about adding products but expanding voltage ranges and improving gate structures, offering insights into what this signifies for the entire industry.

Power Semiconductors Infineon SiC

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Infineon and SK Siltron Sign SiC Wafer Supply Agreement

In 2025, Infineon signed a multi-year SiC wafer supply agreement with SK Siltron, symbolizing a structural shift in the SiC supply chain where wafer procurement secured through single long-term contracts will determine the competitiveness of power semiconductors.

Power Semiconductors Infineon SK Siltron

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Japanese Power Semiconductor Trio's Integration Progress

The "consolidation of three Japanese power semiconductor firms" concept, repeatedly reported since 2025, has garnered attention as a state-backed restructuring initiative supported by Japan's Ministry of Economy, Trade and Industry; however, tracking the movements of the involved companies reveals that the outline of the consolidation remains vague, prompting a need to clarify what has been decided and what remains undecided in the current situation.

Power Semiconductors Japan market restructuring

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Mitsubishi Electric and Coherent Joint Development of 8-inch SiC Substrates

Mitsubishi Electric and Coherent, a leading player in optical components and semiconductor materials, have agreed to jointly develop 8-inch (200mm) SiC wafers, marking a pivotal shift from the current 6-inch (150mm) standard that will fundamentally alter manufacturing cost structures by increasing chip yield per wafer.

Power Semiconductors 8-inch SiC Coherent

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onsemi SiC Business Performance Outlook

As 2025 begins, a prevailing view is that onsemi's SiC business is not growing as much as market expectations, with its SiC business, primarily for EV inverters, facing headwinds from the slowing electrification pace in Europe and the US, leading to a series of downward revisions to full-year forecasts. However, the company remains unwavering in its SiC investment strategy, a stance of "standing firm" that...

Power Semiconductors SiC onsemi

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Power Semiconductor Market Restructuring Map 2026

While the SiC power semiconductor market is projected to reach approximately $3 billion in 2025 and exceed $10 billion by 2030 according to multiple research firms, the current industry focus has shifted from "growth" to "realignment," with the question now being less about who will capture the market and more about who will survive.

Power Semiconductors GaN SiC

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Foundations for Power Semiconductor Supplier Evaluation

A design team preparing for high-volume production of EV inverters faced an initial hurdle in selecting SiC MOSFET suppliers: "We don't know which datasheets to compare." Simply juxtaposing spec sheets proved insufficient as measurement conditions altered the meaning of figures, and reliability data was presented in inconsistent formats across different companies.

Power Semiconductors SiC production

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Renesas Acquires Transphorm GaN Business

Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.

Power Semiconductors GaN M&A

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Renesas and Wolfspeed Sign 10-Year SiC Wafer Supply Agreement

Renesas Electronics and Wolfspeed have signed a 10-year long-term supply agreement for SiC wafers, a duration that highlights the significance of this unprecedented pact in the semiconductor industry, moving beyond a buyer's market for SiC wafer procurement.

Power Semiconductors Renesas SiC

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Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET

As the next generation of SiC MOSFETs emerges, many companies are asking, "We want to evaluate the 5th generation, but where do we start?" Considering Rohm's announced 4th generation features of low on-resistance (RonA) and high short-circuit withstand capability, evaluation of the 5th generation must go beyond device specifications alone, encompassing compatibility with protection circuits and thermal design considerations.

Power Semiconductors ROHM SiC

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Comparing Investment Strategies for SiC, GaN, and IGBT by Major Semiconductor Manufacturers

As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.

Power Semiconductors GaN IGBT

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SiC 8-inch Wafer Supply System

While SiC power semiconductor wafer sizes are transitioning from 6-inch (150mm) to 8-inch (200mm), a significant gap remains between the commencement of this transition and the establishment of a stable supply chain; when assessing the 8-inch wafer supply chain from a design and procurement perspective, the pace of transition is a critical factor.

Power Semiconductors 8-inch SiC SiC

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SiC and GaN Business Opportunities: Evaluation Criteria

SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.

Power Semiconductors GaN SiC

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Key Considerations for Selecting SiC Gate Drivers

As SiC MOSFET adoption accelerates, gate driver selection increasingly dictates design quality; the key lies in SiC devices' smaller die size and higher current density, leading to significantly faster temperature rises during short circuits compared to silicon (Si) devices, necessitating a different approach to protection circuit design.

Power Semiconductors SiC gate driver

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SiC Modules vs. Discrete Components: Selection Criteria

Once the decision to use SiC is made in the early stages of inverter design, the next question is whether to opt for modules or discrete components, a choice that, while appearing to be merely an implementation form, fundamentally impacts system performance, board area, protection circuit design, and procurement flexibility.

Power Semiconductors SiC power module

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SiC Wafer Price Trends and 2026 Outlook

The SiC power semiconductor market in 2024 saw slower-than-expected demand growth, prompting some manufacturers to revise production plans. This "plateau" situation directly impacts a wide range of decisions, from cost calculations for device design to the reassessment of procurement strategies, raising questions about wafer price movements. To discuss the outlook for 2026, we must first consider

Power Semiconductors SiC SiC wafer

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Navigating SiC Wafer Procurement Risks

As the adoption of SiC (Silicon Carbide) power semiconductors accelerates, securing a stable supply of wafers is increasingly becoming the biggest bottleneck after design completion, as even the most advanced devices selected during the design phase cannot be mass-produced without available wafers; therefore, to manage supply chain risks, it is crucial to structurally understand "how and where bottlenecks occur in each process.

Power Semiconductors SiC SiC wafer

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STMicroelectronics Ampere SiC Power Modules for EV 2026

STMicroelectronics and Ampere (a distinct EV powertrain design company, not the Arm-based server design firm formerly part of Oracle) are reportedly collaborating on SiC power modules for next-generation EV traction inverters, targeting commercialization in 2026; the announcement's core is simple, yet it implies a significant strategic shift.

Power Semiconductors Ampere EV

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STMicroelectronics SiC New Fab: Mass Production Progress

STMicroelectronics aims to capture EV and industrial demand by incrementally expanding its SiC power semiconductor fab in Catania, Italy, a move that, considering the scale and timing of investment and the pressure to monetize its SiC business, signals more than just a capacity increase.

Power Semiconductors EV STMicroelectronics

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Toshiba Triple-Gate IGBT Achieves 40% Reduction in Power Loss

Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.

Power Semiconductors IGBT Toshiba

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Wolfspeed: Managing Risks and Alternative Sourcing Strategies

Wolfspeed's financial struggles have long been a topic of industry discussion, but a significant gap remains between recognizing "management risk" and deciding "how to address it next." This article aims to bridge that gap by outlining the structure of the risks and exploring practical alternative sourcing options.

Power Semiconductors SiC SiC wafer