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Sector analysis of market structure, technology shifts, and corporate strategy — grounded in verified facts.

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Feature

IGBT vs SiC MOSFET: How They Differ and Which to Choose

How do IGBTs and SiC MOSFETs differ, and which should you choose for a given application? This guide covers device structure (bipolar vs. unipolar), conduction and switching losses, voltage and frequency ranges, cost, and application-by-application selection across EV, industrial, solar, and data center power.

Power SemiconductorsIGBTSiC MOSFET

News

Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.

Power SemiconductorsMitsubishi ElectricIGBT

News

Rohm: ¥158.4B SiC Impairment Loss and Industry Reform

ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.

Power SemiconductorsPower SemiconductorsSiC

News

AI Data Center Power Devices 2026: SiC/GaN UPS & PSU Demand

Generative-AI data centers are driving SiC/GaN UPS and PSU adoption as efficiency rules tighten. 2026 power-device demand trends and what they mean.

Data Center PowerData CenterPower Semiconductors

Practical Guide

GaN-on-Si: The Next Decade of Industrial Power Electronics

GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.

Power SemiconductorsGaNPower Semiconductors