Power Semiconductors
SiC / GaN / IGBT vendor dynamics, supply chain, and procurement risk
DG Matrix Doubles SST Output to 400 kW
On September 24, 2026, DG Matrix said ST SiC devices doubled its Interport multi-port solid-state transformer from 200 kW to 400 kW in essentially the same power module footprint, at above 98.5% efficiency.
Power Integrations Hits Industry-First 2200V GaN
Power Integrations announced the first 2200V-rated PowiGaN on August 5, 2026, for 1500V data-center distribution, EV auxiliaries and solar inverters.
Navitas and Magnachip: 3300V SiC licensing
Navitas licenses GeneSiC Gen4/Gen5 (1200V, 2300V and above 3300V) to Magnachip for localisation in Korea, targeting grid, industrial and storage over EVs.
STMicroelectronics Q2 2026: double-digit SiC growth and DC upside
STMicro Q2 2026: revenue $3.49B (+26% YoY) at 34.8% gross margin, double-digit SiC growth expected, and AI data-center targets raised above $1B for 2026.
EV Charging Semis: OBC and DC Fast Charging
SiC/GaN adoption is accelerating for OBCs and DC fast charging. Covers 30% loss cuts, 50% density gains, 800V migration, V2X, and ASIL-D safety.
Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%
Wolfspeed's Gen-5 SiC cuts specific on-resistance by up to 27% versus rival 1200V parts, spanning 1200V and 750V on a production-ready 200mm platform.
IGBT vs SiC MOSFET: How They Differ and Which to Choose
IGBT vs SiC MOSFET: device structure, conduction and switching losses, voltage and frequency ranges, cost, and how to choose per application.
ASE 310mm PLP Line: Industry First for AI Chips
ASE developed the industry-first automated 310mm PLP line for AI/HPC chips, with 96,100mm² usable area and production starting 1H 2027.
Microchip: 3.3kV SiC Module HV-D3 Announced
Microchip's 3.3kV HV-D3 mSiC module with 6kV isolation halves series devices for 13.8kV and 34.5kV grid ties, covering 100-300A for data-center SSTs.
AIXTRON: FY2026 Guidance Raised on 30% Order Growth
AIXTRON Q1 2026: order intake of about EUR 171M (+30% YoY) on data-center optics demand, with FY2026 revenue guidance raised to about EUR 560M.
IGBT to SiC MOSFET: Evaluating TCO and Miniaturization
When to switch from IGBT to SiC: not device price, but how smaller cooling and passives change system BOM cost, plus hybrid SiC as a middle step.
Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC
Why Infineon raised full-year guidance at its FY2026 Q2 results, and what an upward revision signals to the rest of the supply chain.
Power Devices: Technology Outlook Beyond SiC and GaN
After SiC and GaN: gallium oxide, GaN-on-GaN and diamond compared on maturity, production timing, and what designers and buyers should do now.
Cyient Announces India's First GaN Power ICs
Cyient unveiled 650V GaN power ICs for AI, telecom, fast charging and e-mobility, aimed at higher conversion efficiency in next-generation designs.
GaN Market: Navitas Earnings and India Mass Production
Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.
GaN-on-Si: The Next Decade of Industrial Power Electronics
GaN-on-Si is displacing silicon below 650V, moving from EV on-board chargers into industrial motor control, telecom power and UPS. Adoption by application.
SiC Market 2026: Demand Shift to Industrial as EV Slows
SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.
Solar Inverter Power Devices: Si IGBT vs SiC vs GaN
How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.
AI Server Power Supplies: GaN Adoption Criteria
Choosing GaN for AI server power supplies: where it beats SiC and Si on switching frequency, power density and thermal design, and where it does not.
BYD Expands 1200V SiC Output for In-House EV Inverters
BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.
Chinese SiC Manufacturers: Selection Criteria
Adopting Chinese SiC suppliers: what to verify and how, rather than deciding on country of origin or price alone. Quality, qualification and supply criteria.
EV Power Semiconductor Application Selection Matrix
SiC modules cost 2-3x silicon per inverter, yet EV makers keep switching. Which EV power conversion applications justify SiC, and which do not.
EV SiC Inverters: Loss Calculation and Range Improvement
One point of EV inverter efficiency is worth several kilometres of range. How to decompose the loss breakdown before expecting SiC to deliver gains.
SiC vs. GaN for EV Applications: Choosing the Right Material
800V EV platforms such as Taycan, IONIQ 6 and EV6 change device selection. Where SiC and GaN each fit across traction, on-board charging and auxiliaries.
Fuji Electric Unveils Next-Generation IGBT
Fuji Electric's 8th-generation IGBT claims large gains in both switching loss and on-voltage for EV inverters, just as silicon IGBT was being written off.
Are IGBTs Still Relevant in the Age of SiC and GaN Silicon?
SiC is scaling toward the 2030s and GaN is spreading into data-center power. So where does silicon IGBT still win, and for how long?
Industrial Inverters: SiC MOSFET Reliability Evaluation
For industrial inverters the decisive SiC question is not loss or switching speed but short-circuit withstand, because duty differs from EV use.
Mitsubishi Electric: 8-inch SiC Substrates with Coherent
Mitsubishi Electric and Coherent agreed to jointly develop 8-inch SiC wafers, a shift from the 150mm standard that changes cost per chip.
onsemi SiC Business Performance Outlook
onsemi's SiC business faces slower EV electrification in Europe and the US and repeated guidance cuts, yet its SiC investment stance has not changed.
Foundations for Power Semiconductor Supplier Evaluation
Comparing SiC MOSFET datasheets is not enough: measurement conditions change what the numbers mean, and reliability data is formatted differently by vendor.
Evaluating the Adoption of ROHM's 5th Generation SiC MOSFET
Evaluating ROHM's Gen-5 SiC MOSFET: beyond datasheet specs to protection-circuit compatibility and thermal design, building on Gen-4's low RonA.
Power Semi Majors: Investment Strategies for SiC, GaN, IGBT
EV inverters, industrial efficiency and data-center density pull at once. Where the majors invest, defend and divest across SiC, GaN and IGBT.
SiC and GaN Business Opportunities: Evaluation Criteria
SiC or GaN is the wrong question alone: they differ in voltage range, switching domain and cost, so the answer depends on application and timing.
SiC Modules vs. Discrete Components: Selection Criteria
SiC module or discrete is not just a packaging choice: it decides system performance, board area, protection design and procurement flexibility.
SiC Wafer Price Trends and 2026 Outlook
SiC demand grew slower than planned in 2024 and production plans were revised. What that plateau means for wafer prices heading into 2026.
STMicroelectronics Ampere SiC Power Modules for EV 2026
STMicroelectronics and Ampere are targeting 2026 commercialization of SiC power modules for next-generation EV traction inverters.
STMicroelectronics SiC New Fab: Mass Production Progress
STMicroelectronics keeps expanding its SiC fab in Catania. Why the scale and timing of the investment signal more than a simple capacity increase.
Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%
Toshiba's Triple-Gate IGBT claims up to 40% lower loss. In railways and large inverters even 1% changes cooling cost and annual electricity bills.