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News

Power Integrations Hits Industry-First 2200V GaN

Power Integrations announced on August 5, 2026 the industry's first 2200V-rated PowiGaN technology. Target applications span AI data center 1500V distribution, EV auxiliary power, and solar inverters — moving GaN into voltage territory long dominated by SiC.

Power Semiconductors GaN PowiGaN

News

GaN patent war: Infineon ITC win and Wolfspeed suit

Infineon secured a final U.S. ITC import and sales ban against Innoscience GaN products, the first large case in which European IP excludes Asian products from the U.S. market. Wolfspeed also sued Navitas for patent infringement, turning GaN patent battles into procurement risk.

Power Semiconductors GaN power semiconductors

News

SiC/GaN 2026: China OEM demand

After the impairment cycle, SiC/GaN is shifting on both demand and technology. onsemi is supplying EliteSiC for NIO's 900V move and Geely's SEP system, partnering with Innoscience on GaN, while Toshiba and ROHM add new driver and cooling packages.

Power Semiconductors power semiconductors SiC

News

AIXTRON: FY2026 Guidance Raised on 30% Order Growth

AIXTRON released its Q1 2026 preliminary results, with order intake reaching approximately €171 million (+30% YoY), driven by surging data-center optical communications demand. The company raised its FY2026 full-year revenue guidance from approximately €520 million to approximately €560 million.

Power Semiconductors AIXTRON MOCVD

News

Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC

Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.

Power Semiconductors Infineon GaN

Feature

Power Devices: Technology Outlook Beyond SiC and GaN

As SiC and GaN become mainstream for industrial and automotive power semiconductors, three next-generation candidates — Ga₂O₃ (gallium oxide), GaN-on-GaN (native substrate), and diamond semiconductors — are at the forefront of R&D. This article maps the technology maturity, mass-production timelines, and business impact of each material, and outlines the steps designers and procurement managers should take today.

Power Semiconductors GaN SiC

News

India Semis: Tata-ASML Partnership and First Fab Launch

In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'

Power Semiconductors India semiconductor fab

News

Cyient Announces India's First GaN Power ICs

Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.

Power Semiconductors GaN power IC

News

GaN Market: Navitas Earnings and India Mass Production

Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.

Power Semiconductors GaN Financial Results

Practical Guide

GaN-on-Si: The Next Decade of Industrial Power Electronics

GaN-on-Si is displacing silicon in low-to-mid voltage applications below 650V. Having gained an early foothold in EV on-board chargers, this technology is now extending its reach into industrial motor control, telecom power supplies, and industrial UPS. This article examines adoption trends by application and the key procurement considerations.

Power Semiconductors GaN Power Semiconductors

Practical Guide

Solar Inverter Power Devices: Si IGBT vs SiC vs GaN

How solar PCS choose between Si IGBT, SiC MOSFET, and GaN-on-Si by application and output scale — selection criteria and supplier positioning.

Power Semiconductors Solar Power Power Conditioning System

News

Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)

8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.

Power Semiconductors SiC GaN

Practical Guide

AI Server Power Supplies: GaN Adoption Criteria

Deciding whether to adopt GaN in AI server power supply design isn't solely based on it being "next-generation technology"; it requires confirming GaN's clear advantages over SiC and Si along the three axes of switching frequency, power density, and thermal design.

Power Semiconductors AI server GaN

Practical Guide

SiC vs. GaN for EV Applications: Choosing the Right Material

The adoption of 800V battery systems is accelerating, exemplified by the Porsche Taycan, Hyundai IONIQ 6, and Kia EV6, all of which have transitioned from traditional 400V architectures to double the voltage to shorten charging times and improve driving efficiency, a trend directly impacting power device selection, as evidenced by Si

Power Semiconductors EV GaN

Practical Guide

GaN Power Semis: Miniaturization and Efficiency Benefits

If you've ever wrestled with improving power conversion efficiency by a single point in inverter design, the numbers alone tell you what GaN (Gallium Nitride) has changed: while silicon MOSFETs hit a wall at tens of kHz switching frequencies, GaN handles up to several MHz, enabling smaller passive components (inductors, capacitors).

Power Semiconductors GaN power semiconductor

Feature

Power Semiconductor Market Restructuring Map 2026

While the SiC power semiconductor market is projected to reach approximately $3 billion in 2025 and exceed $10 billion by 2030 according to multiple research firms, the current industry focus has shifted from "growth" to "realignment," with the question now being less about who will capture the market and more about who will survive.

Power Semiconductors GaN SiC

News

Renesas Acquires Transphorm GaN Business

Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.

Power Semiconductors GaN M&A

Feature

Power Semi Majors: Investment Strategies for SiC, GaN, IGBT

As multiple demand waves surge simultaneously—including the shift in EV inverter dominance, pressure for higher efficiency in industrial equipment, and soaring power density in data centers—major semiconductor manufacturers face critical choices regarding where to invest, defend, and divest among SiC, GaN, and IGBT technologies.

Power Semiconductors GaN IGBT

Feature

SiC and GaN Business Opportunities: Evaluation Criteria

SiC or GaN: The next-generation power semiconductor question, while frequently asked in the industry, is somewhat simplistic; though both are wide bandgap semiconductors, SiC and GaN differ in their optimal voltage ranges, switching domains, and cost structures, meaning the answer depends on the application, voltage range, and timeframe under consideration, rather than a simple 'which is superior' approach.

Power Semiconductors GaN SiC