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41 results — theme: Power Semiconductors — category: News Clear filter

News

Power Integrations Hits Industry-First 2200V GaN

Power Integrations announced on August 5, 2026 the industry's first 2200V-rated PowiGaN technology. Target applications span AI data center 1500V distribution, EV auxiliary power, and solar inverters — moving GaN into voltage territory long dominated by SiC.

Power SemiconductorsGaNPowiGaN

News

Nextpower Completes Zigor Power Deal

Nextpower completed its acquisition of Zigor's power conversion business and Apex Power's assets on July 30, 2026. It plans to ramp US manufacturing across multiple sites, starting deliveries in early 2027 and targeting over 10GW online within 12 months.

Power SemiconductorsNextpowerZigor

News

RIR Power's India-First SiC Vertical Push

RIR Power Electronics, founded in 1969, rebranded in September 2025 as India's first vertically integrated SiC semiconductor maker. It is building a SiC power campus in Odisha with INR 6.18 billion in investment, listed on the NSE in July 2026, and targets FY2027 mass production.

Power SemiconductorsRIR Power ElectronicsSiC

News

Navitas and Magnachip: 3300V SiC licensing

On July 23, 2026, Navitas announced it will license GeneSiC Gen4/Gen5 technology, covering 1200V, 2300V, and above 3300V, to Magnachip. Magnachip will transfer and localize the technology at its Korean fab. The target is high-voltage grid infrastructure, industrial electrification, and energy storage rather than EVs, showing SiC competition broadening from automotive into power and industrial markets.

Power SemiconductorsNavitasMagnachip

News

STMicroelectronics Q2 2026: double-digit SiC growth and DC upside

STMicroelectronics reported Q2 2026 revenue of USD 3.49 billion, up 26% year on year, with a 34.8% gross margin. It expects double-digit SiC revenue growth in 2026, supported by the move from 6-inch to 8-inch wafers, and raised its AI data-center targets to over USD 1 billion in 2026 and over USD 2 billion in 2027. Q3 guidance is USD 3.70 billion and Q4 is expected to exceed USD 4 billion.

Power SemiconductorsSTMicroelectronicsSiC

News

GaN patent war: Infineon ITC win and Wolfspeed suit

Infineon secured a final U.S. ITC import and sales ban against Innoscience GaN products, the first large case in which European IP excludes Asian products from the U.S. market. Wolfspeed also sued Navitas for patent infringement, turning GaN patent battles into procurement risk.

Power SemiconductorsGaNpower semiconductors

News

SiC solid-state transformers: AIDC deployment begins

SiC solid-state transformers (SSTs) have entered the commercial stage. Weiguang Energy has shipped more than 100 SSTs and secured over 40GW of capacity across two sites. Delta has announced an SST delivering MW-class power in 1m² with more than 50% space savings, while Eaton offers its 2.5MW MV SST 2.0. This article reviews the move to direct conversion from medium voltage to 800VDC using primary information.

Power SemiconductorsSiCsolid-state transformer

News

SiC investment: EU approves EUR 659M, China raises capital

On July 14, 2026, the European Commission approved EUR 659 million in state aid for four semiconductor facilities in Germany. Element 3-5 receives EUR 353 million for SiC epitaxial wafers and Vishay EUR 214 million for a power-MOSFET plant. In China, AccoPower (芯聚能) and Xinyueneng (芯粤能) reportedly raised more than RMB 700 million in a Series D round. Public and private capital is accelerating into SiC supply chains in Europe and China.

Power SemiconductorsSiCEU Chips Act

News

India Semiconductor: CG Semi Starts OSAT Production

CG Semi began commercial production at its G1 OSAT facility in Sanand, Gujarat, on July 4, 2026. The site can produce up to 300 million units per year, with more than ₹76 billion planned for G1 and G2 over five years.

Power Semiconductorspower semiconductorsIndia

News

Power semis: Infineon expands, onsemi sells fabs

Infineon opened one of the world's largest power semiconductor fabs in Dresden on July 2, 2026, with EUR 5 billion of investment and about 1,000 jobs, while onsemi is selling two fabs under Fab Right. Primary sources show how expansion and asset-light restructuring are diverging.

Power Semiconductorspower semiconductorsInfineon

News

SiC/GaN 2026: China OEM demand

After the impairment cycle, SiC/GaN is shifting on both demand and technology. onsemi is supplying EliteSiC for NIO's 900V move and Geely's SEP system, partnering with Innoscience on GaN, while Toshiba and ROHM add new driver and cooling packages.

Power Semiconductorspower semiconductorsSiC

News

Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%

On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.

Power SemiconductorsWolfspeedSiC MOSFET

News

India Semiconductor: OSAT and Design Onshore

Tata is building India's first semiconductor assembly and test facility, TSAT, in Jagiroad, Assam, with an investment of Rs 27,000 crore, or more than $3 billion. After ramp-up, it is expected to produce up to 48 million chips per day and support more than 27,000 jobs.

Power SemiconductorsIndia SemiconductorOSAT

News

ASE 310mm PLP Line: Industry First for AI Chips

ASE developed the industry-first automated 310mm PLP line for AI/HPC chips, with 96,100mm² usable area and production starting 1H 2027.

Power SemiconductorsASEPanel-Level Packaging

News

Entegris/Inpria: EUV MOR Resist Cross-License

Entegris and JSR subsidiary Inpria signed a non-exclusive cross-license covering metal oxide resist (MOR) patents for EUV lithography. The agreement covers formulation, precursor synthesis, and ultra-high-purity filtration, and also ends the pending IPR2025-00267 patent review.

Power SemiconductorsEntegrisJSR

News

TDK: micro POL 'FS3303' Enters Mass Production

TDK began mass production of the ultra-compact 'FS3303' micro POL DC-DC module for AI edge devices on May 19, 2026. The 2.5x2.5mm, 1.2mm-high module delivers 3A, reaches about 95% peak efficiency, and supports 2.7-6V input and 0.4-3.3V output rails.

Power SemiconductorsTDKmicro POL

News

Microchip: 3.3kV SiC Module HV-D3 Announced

Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).

Power SemiconductorsMicrochipSiC

News

AIXTRON: FY2026 Guidance Raised on 30% Order Growth

AIXTRON released its Q1 2026 preliminary results, with order intake reaching approximately €171 million (+30% YoY), driven by surging data-center optical communications demand. The company raised its FY2026 full-year revenue guidance from approximately €520 million to approximately €560 million.

Power SemiconductorsAIXTRONMOCVD

News

Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.

Power SemiconductorsToshibaSiC MOSFET

News

Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.

Power SemiconductorsMitsubishi ElectricIGBT

News

Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs

ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.

Power SemiconductorsROHMSiC MOSFET

News

Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC

Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.

Power SemiconductorsInfineonGaN

News

Doosan Acquires SK Siltron: SiC Wafer Supply Shift 2026

Doosan acquires 100% of SK Siltron for ~5 trillion KRW. We assess the SiC wafer vertical-integration play despite a 414bn KRW impairment and covenant risk.

Power SemiconductorsSiCSiC wafer

News

India Semis: Tata-ASML Partnership and First Fab Launch

In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'

Power SemiconductorsIndiasemiconductor fab

News

Cyient Announces India's First GaN Power ICs

Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.

Power SemiconductorsGaNpower IC

News

GaN Market: Navitas Earnings and India Mass Production

Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.

Power SemiconductorsGaNFinancial Results

News

Rohm: ¥158.4B SiC Impairment Loss and Industry Reform

ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.

Power SemiconductorsPower SemiconductorsSiC

News

SiC Market 2026: Demand Shift to Industrial as EV Slows

SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.

Power SemiconductorsSiCEV

News

Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)

8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.

Power SemiconductorsSiCGaN

News

BYD Expands 1200V SiC Output for In-House EV Inverters

BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.

Power SemiconductorsBYDEV

News

Fuji Electric Unveils Next-Generation IGBT

As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.

Power SemiconductorsIGBT富士電機

News

Infineon CoolSiC Product Lineup Updates

Infineon's CoolSiC update should be read through voltage coverage, gate structure, short-circuit margin, and driver fit.

Power SemiconductorsInfineonSiC

News

Infineon-SK Siltron SiC Wafer Deal Cuts Risk

Infineon signed a multi-year SiC wafer deal with SK Siltron in 2025, securing supply as the SiC wafer chain shifts to long-term contracts.

Power SemiconductorsInfineonSK Siltron

News

Japanese Power Semiconductor Trio's Integration Progress

The "consolidation of three Japanese power semiconductor firms" concept, repeatedly reported since 2025, has garnered attention as a state-backed restructuring initiative supported by Japan's Ministry of Economy, Trade and Industry; however, tracking the movements of the involved companies reveals that the outline of the consolidation remains vague, prompting a need to clarify what has been decided and what remains undecided in the current situation.

Power SemiconductorsJapanmarket restructuring

News

Mitsubishi Electric: 8-inch SiC Substrates with Coherent

Mitsubishi Electric and Coherent, a leading player in optical components and semiconductor materials, have agreed to jointly develop 8-inch (200mm) SiC wafers, marking a pivotal shift from the current 6-inch (150mm) standard that will fundamentally alter manufacturing cost structures by increasing chip yield per wafer.

Power Semiconductors8-inch SiCCoherent

News

onsemi SiC Business Performance Outlook

As 2025 begins, a prevailing view is that onsemi's SiC business is not growing as much as market expectations, with its SiC business, primarily for EV inverters, facing headwinds from the slowing electrification pace in Europe and the US, leading to a series of downward revisions to full-year forecasts. However, the company remains unwavering in its SiC investment strategy, a stance of "standing firm" that...

Power SemiconductorsSiConsemi

News

Renesas Acquires Transphorm GaN Business

Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.

Power SemiconductorsGaNM&A

News

Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed

Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.

Power SemiconductorsRenesasSiC

News

STMicroelectronics Ampere SiC Power Modules for EV 2026

STMicroelectronics and Ampere are targeting 2026 commercialization of SiC power modules for next-generation EV traction inverters.

Power SemiconductorsAmpereEV

News

STMicroelectronics SiC New Fab: Mass Production Progress

STMicroelectronics aims to capture EV and industrial demand by incrementally expanding its SiC power semiconductor fab in Catania, Italy, a move that, considering the scale and timing of investment and the pressure to monetize its SiC business, signals more than just a capacity increase.

Power SemiconductorsEVSTMicroelectronics

News

Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%

Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.

Power SemiconductorsIGBTToshiba