Sector Signals
JA/EN/ZH

Sector Signals

Research Notes

Sector analysis of market structure, technology shifts, and corporate strategy — grounded in verified facts.

Power SemiconductorsSustainabilityEV MarketData Center PowerPractical GuideNewsFeature
Paid Reports →
30 results — theme: Power Semiconductors — category: News Clear filter

News

Wolfspeed: Gen 5 SiC Cuts Specific On-Resistance up to 27%

On June 9, 2026, Wolfspeed announced its fifth-generation SiC technology, reducing specific on-resistance (RSP) by up to 27% versus competing 1200V solutions. Covering 1200V/750V on a production-ready 200mm platform, it targets automotive traction inverters, industrial power supplies, and EV charging infrastructure.

Power SemiconductorsWolfspeedSiC MOSFET

News

India Semiconductor: OSAT and Design Onshore

Tata is building India's first semiconductor assembly and test facility, TSAT, in Jagiroad, Assam, with an investment of Rs 27,000 crore, or more than $3 billion. After ramp-up, it is expected to produce up to 48 million chips per day and support more than 27,000 jobs.

Power SemiconductorsIndia SemiconductorOSAT

News

ASE: Automated 310mm Square PLP Line Developed

ASE announced on May 26, 2026 that it has developed an industry-first automated 310mm square panel-level packaging (PLP) line. The usable area reaches up to 96,100mm², with 2/2µm line/space for FOCoS and 8/8µm for FOCoS-Bridge. Production is planned for the first half of 2027.

Power SemiconductorsASEPanel-Level Packaging

News

Entegris/Inpria: EUV MOR Resist Cross-License

Entegris and JSR subsidiary Inpria signed a non-exclusive cross-license covering metal oxide resist (MOR) patents for EUV lithography. The agreement covers formulation, precursor synthesis, and ultra-high-purity filtration, and also ends the pending IPR2025-00267 patent review.

Power SemiconductorsEntegrisJSR

News

TDK: micro POL 'FS3303' Enters Mass Production

TDK began mass production of the ultra-compact 'FS3303' micro POL DC-DC module for AI edge devices on May 19, 2026. The 2.5x2.5mm, 1.2mm-high module delivers 3A, reaches about 95% peak efficiency, and supports 2.7-6V input and 0.4-3.3V output rails.

Power SemiconductorsTDKmicro POL

News

Microchip: 3.3kV SiC Module HV-D3 Announced

Microchip announced the 3.3kV SiC power module 'HV-D3 mSiC' on May 26, 2026. With 6kV isolation, it can cut the number of series devices by about half versus lower-voltage SiC for 13.8kV and 34.5kV grid connections, covering 100-300A for AI data center solid-state transformers (SSTs).

Power SemiconductorsMicrochipSiC

News

AIXTRON: FY2026 Guidance Raised on 30% Order Growth

AIXTRON released its Q1 2026 preliminary results, with order intake reaching approximately €171 million (+30% YoY), driven by surging data-center optical communications demand. The company raised its FY2026 full-year revenue guidance from approximately €520 million to approximately €560 million.

Power SemiconductorsAIXTRONMOCVD

News

Toshiba: 1200V SiC MOSFET TW007D120E with Enhanced FOM

Toshiba Device & Storage commenced test sample shipments of its 1200V trench-gate SiC MOSFET 'TW007D120E' on May 20, 2026. The device achieves approximately 52% improvement in the figure of merit Rds(on)×Qgd compared to current products, with the company targeting adoption in AI data center power supplies and renewable energy equipment.

Power SemiconductorsToshibaSiC MOSFET

News

Mitsubishi: 1200V NX IGBT Sample Cuts Loss by 19%

Mitsubishi Electric has begun sample shipments of its 8th-generation NX-type 1200V IGBT modules in May 2026. The new modules reduce power loss by up to 19% compared to the previous generation, targeting adoption in industrial inverters, UPS systems, and solar power generation systems.

Power SemiconductorsMitsubishi ElectricIGBT

News

Rohm: 750V SiC MOSFET SCT4013DLL Replaces IGBT in BBUs

ROHM's TOLL-package 750V SiC MOSFET 'SCT4013DLL', entering mass production in September 2025, is gaining traction in BBU (Battery Backup Unit) applications for AI servers. This article covers the adoption drivers and key specifications.

Power SemiconductorsROHMSiC MOSFET

News

Infineon: FY2026 Q2 Growth Driven by AI, GaN, and SiC

Raising full-year guidance is a decision semiconductor manufacturers handle with care. In an industry repeatedly caught off guard by inventory corrections and demand misreads, an upward revision to the outlook ripples not just through share prices but across the entire supply chain. Here is the context behind Infineon Technologies making that call in its FY2026 Q2 earnings report.

Power SemiconductorsInfineonGaN

News

Doosan Acquires SK Siltron: SiC Wafer Supply Shift 2026

Doosan acquires 100% of SK Siltron for ~5 trillion KRW. We assess the SiC wafer vertical-integration play despite a 414bn KRW impairment and covenant risk.

Power SemiconductorsSiCSiC wafer

News

India Semis: Tata-ASML Partnership and First Fab Launch

In May 2026, Tata Electronics and ASML signed a memorandum of understanding, bringing India's first advanced semiconductor fab closer to reality. From the $11 billion Dholera fab to the participation of Japanese firms including ROHM, India's supply chain buildout is moving from 'vision' to 'execution.'

Power SemiconductorsIndiasemiconductor fab

News

Cyient Announces India's First GaN Power ICs

Cyient has unveiled 650V GaN power ICs targeting AI, telecommunications, fast charging, and e-mobility applications. These ICs deliver improved power efficiency and contribute to enhanced performance in next-generation applications.

Power SemiconductorsGaNpower IC

News

GaN Market: Navitas Earnings and India Mass Production

Navitas Semiconductor's Q1 2026 earnings beat expectations, driving a surge in its stock price, underscoring the market success of its GaN technology.

Power SemiconductorsGaNFinancial Results

News

Rohm: ¥158.4B SiC Impairment Loss and Industry Reform

ROHM recorded an impairment loss of ¥193.6 billion in its power semiconductor business for the fiscal year ending March 2025, resulting in a net loss of ¥158.4 billion, primarily due to impairments on fixed assets in the SiC business.

Power SemiconductorsPower SemiconductorsSiC

News

SiC Market 2026: Demand Shift to Industrial as EV Slows

SiC demand is shifting from EV to industrial, solar, and data centers as EV growth slows. What the structural change means for supplier portfolios.

Power SemiconductorsSiCEV

News

Wide Bandgap Cost Roadmap: 8-inch SiC & GaN-on-Si (2026)

8-inch SiC wafers and GaN-on-Si epitaxy are reshaping wide-bandgap cost curves. When the gap versus silicon narrows, and the key cost-down factors.

Power SemiconductorsSiCGaN

News

BYD Expands 1200V SiC Output for In-House EV Inverters

BYD Semiconductor is scaling 1200V SiC MOSFET output for its own EV inverters — the world's largest EV maker moving upstream into power semiconductors.

Power SemiconductorsBYDEV

News

Fuji Electric Unveils Next-Generation IGBT

As the mid-2020s saw increasing pronouncements of silicon IGBTs becoming obsolete, Fuji Electric unveiled its next-generation IGBTs. Positioned by the company as "8th generation," these devices reportedly achieve significant improvements over conventional models in both switching loss and on-voltage, poised to revolutionize EV inverters.

Power SemiconductorsIGBT富士電機

News

Infineon CoolSiC Product Lineup Updates

Infineon's CoolSiC update should be read through voltage coverage, gate structure, short-circuit margin, and driver fit.

Power SemiconductorsInfineonSiC

News

Infineon and SK Siltron Sign SiC Wafer Supply Agreement

In 2025, Infineon signed a multi-year SiC wafer supply agreement with SK Siltron, symbolizing a structural shift in the SiC supply chain where wafer procurement secured through single long-term contracts will determine the competitiveness of power semiconductors.

Power SemiconductorsInfineonSK Siltron

News

Japanese Power Semiconductor Trio's Integration Progress

The "consolidation of three Japanese power semiconductor firms" concept, repeatedly reported since 2025, has garnered attention as a state-backed restructuring initiative supported by Japan's Ministry of Economy, Trade and Industry; however, tracking the movements of the involved companies reveals that the outline of the consolidation remains vague, prompting a need to clarify what has been decided and what remains undecided in the current situation.

Power SemiconductorsJapanmarket restructuring

News

Mitsubishi Electric: 8-inch SiC Substrates with Coherent

Mitsubishi Electric and Coherent, a leading player in optical components and semiconductor materials, have agreed to jointly develop 8-inch (200mm) SiC wafers, marking a pivotal shift from the current 6-inch (150mm) standard that will fundamentally alter manufacturing cost structures by increasing chip yield per wafer.

Power Semiconductors8-inch SiCCoherent

News

onsemi SiC Business Performance Outlook

As 2025 begins, a prevailing view is that onsemi's SiC business is not growing as much as market expectations, with its SiC business, primarily for EV inverters, facing headwinds from the slowing electrification pace in Europe and the US, leading to a series of downward revisions to full-year forecasts. However, the company remains unwavering in its SiC investment strategy, a stance of "standing firm" that...

Power SemiconductorsSiConsemi

News

Renesas Acquires Transphorm GaN Business

Renesas Electronics has agreed to acquire Transphorm, a pioneer in GaN-on-SiC vertical GaN structures, in a deal set to fundamentally transform its power semiconductor portfolio in 2025.

Power SemiconductorsGaNM&A

News

Renesas: 10-Year SiC Wafer Supply Deal with Wolfspeed

Renesas and Wolfspeed's 10-year SiC wafer agreement shows how supply, wafer quality, and 8-inch migration are becoming strategic assets.

Power SemiconductorsRenesasSiC

News

STMicroelectronics Ampere SiC Power Modules for EV 2026

STMicroelectronics and Ampere are targeting 2026 commercialization of SiC power modules for next-generation EV traction inverters.

Power SemiconductorsAmpereEV

News

STMicroelectronics SiC New Fab: Mass Production Progress

STMicroelectronics aims to capture EV and industrial demand by incrementally expanding its SiC power semiconductor fab in Catania, Italy, a move that, considering the scale and timing of investment and the pressure to monetize its SiC business, signals more than just a capacity increase.

Power SemiconductorsEVSTMicroelectronics

News

Toshiba: Triple-Gate IGBT Reduces Power Loss by 40%

Toshiba announces new "Triple-Gate IGBT" structure, capable of up to 40% loss reduction compared to conventional devices; this 40% improvement signifies more than a generational spec upgrade, as in industrial equipment, railways, and large inverters, the primary battlegrounds for IGBTs, even a 1% loss reduction directly impacts system cooling costs and annual electricity expenses.

Power SemiconductorsIGBTToshiba